Low Pressure Chemical Vapor Deoposition, LPCVD, is utilized in the deposition of many silicon based compounds at pressures ranging from about 0.1T to 10T and temperatures ranging from 500-900C.
Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr