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4 inch wafer

Short Name:

4"

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
Ex Fab Develop Wet Bench wbexfab_dev	WbExfab_Dev Training	Flexible	SNF	SNF Exfab Paul G Allen 104 Stinson
Ex Fab Solvent Wet Bench wbexfab_solv	WbExfab_Solv Training	Flexible	SNF	SNF Exfab Paul G Allen 104 Stinson
Fiji 1 fiji1	Fiji 1 and 2 Training	Semiclean	SNF	SNF Cleanroom Paul G Allen L107
Fiji 2 fiji2	Fiji 1 and 2 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Fiji 3 fiji3	Fiji 3 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Restricted to non-conductive films only
Finetech Lambda flipchipbonder	Flip Chip Bonder Training	Flexible	SNF	SNF Exfab Paul G Allen 104 Stinson
First Nano carbon nanotube CVD furnace cvd-nanotube	cvd-nanotube training	Flexible	SNF	SNF Exfab Paul G Allen L119 Año Nuevo	Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Flexus 2320 Stress Tester stresstest	Flexus 2320 Stress Tester Training	All	SNF	SNF Cleanroom Paul G Allen L107
Gasonics Aura Asher gasonics	Gasonics Aura Asher Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Headway 3 Manual Resist Spinner headway3	Headway 3 Training	Flexible	SNF	SNF Exfab Paul G Allen 104 Stinson
Headway Manual Resist Spinner headway2	Headway Manual Resist Spinner Training	All	SNF	SNF Cleanroom Paul G Allen L107	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Heidelberg MLA 150 heidelberg	Heidelberg Training	All	SNF	SNF Exfab Paul G Allen 104 Stinson	Direct Write
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	All	SNF	SNF Cleanroom Paul G Allen L107	Direct Write
HMDS Vapor Prime Oven, YES yes	YES Prime Oven Training	All	SNF	SNF Cleanroom Paul G Allen L107	Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
Innotec Evaporator Innotec	Innotec Evaporator Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Precious metals limit is <200nm
Intlvac Evaporation Intlvac_evap	Intlvac Evaporation Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107
Karl Suss MA-6 Contact Aligner 1 karlsuss	Karl Suss MA-6 Contact Aligner 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align, including IR.
Karl Suss MA-6 Contact Aligner 2 karlsuss2	Karl Suss MA-6 Contact Aligner 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Backside align.
Keyence Digital Microscope VHX-6000 keyence	Keyence Training	All	SNF	SNF Exfab Paul G Allen 104 Stinson
Lam Research TCP 9400 Poly Etcher lampoly	Lam Research TCP 9400 Poly Etcher Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.

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Equipment name & Badger ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Objective Separation	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Ex Fab Develop Wet Bench wbexfab_dev	Optical Photolithography > Resist Develop	Flexible															Pieces 2" 3" 4" 6" 8" 12" Other
Ex Fab Solvent Wet Bench wbexfab_solv	Patterning > Metal Lift-off Cleaning > Solvent Cleaning	Flexible													Solvents		Pieces 2" 3" 4" 6" 8" Other
Fiji 1 fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Semiclean			1 Å - 50 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia								24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Fiji 2 fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible			1 Å - 50 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru SiN SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia								24 °C - 350 °C		Ar H₂ N₂ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Fiji 3 fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible			1 Å - 50 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania								24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (III-V)
Finetech Lambda flipchipbonder	Bonding	Flexible												°C - 400 °C			Pieces 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge)	1
First Nano carbon nanotube CVD furnace cvd-nanotube	Deposition > Chemical Vapor Deposition (CVD) > Carbon Nanotube CVD Growth	Flexible				CNT								800 °C - 1100 °C		Ar C₂H₅OH CH₄ H₂ O₂	Pieces 2" 3" 4"	(Si) , (SiO2)	1x4" wafer or multiple pieces
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement	All															3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Gasonics Aura Asher gasonics	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Clean, Semiclean	Resist	PI												O₂	4"	(Si)	25
Headway 3 Manual Resist Spinner headway3	Optical Photolithography > Resist coat > Resist Coat (manual)	Flexible										Resists Shipley 3612 resist SPR220-3 resist SPR220-7					Pieces 2" 3" 4"		1 piece or wafer
Headway Manual Resist Spinner headway2	Optical Photolithography > Resist coat > Resist Coat (manual)	All										AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Optical Photolithography > Exposure > Direct Write	All							405 nm								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Optical Photolithography > Exposure > Direct Write	All							375 nm								Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Optical Photolithography > Wafer preparation before resist > Singe Optical Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	All												150 ºC	[(CH₃)₃Si]₂NH		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Innotec Evaporator Innotec	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible				Ag Al Au Co Cr Cu Fe Ge In Ni Pd Si Ta Ti W Moly	Er Hf Ir Ru Tb Y										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	22 four inch wafers
Intlvac Evaporation Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean			0 - 1 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly											Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	12 4 inch wafers, 2 6 inch wafers
Karl Suss MA-6 Contact Aligner 1 karlsuss	Optical Photolithography > Exposure > Contact Aligner	All							365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner 2 karlsuss2	Optical Photolithography > Exposure > Contact Aligner	All							365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	All															Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean, Semiclean	Si Poly Silicon	Ge SiGe												80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂	4"	(Si) , (SiGe)	25

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