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6 inch wafer

Short Name:

6"

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Plasma Therm Versaline LL ICP Dielectric Etcher Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Plasma Therm Versaline LL ICP Metal Etcher Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Plasmaetch PE-50 plasma-etch	Plasmaetch PE-50 Training	Flexible	SNF	SNF Exfab Paul G Allen 155 Mavericks	Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment At SNF - nSiL lab
Prometrix Resistivity Mapping System prometrix	Prometrix Training	All	SNF	SNF Cleanroom Paul G Allen L107	3 Probe Heads for different Cleanliness
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Savannah savannah	Savannah Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Sensofar S-neox s-neox	Sensofar S-neox Training	All	SNF	SNF Cleanroom Paul G Allen L107	non contact 3D optical profiling
Sinton Lifetime Tester sinton-lifetime-tester	Sinton Lifetime Tester Training	Flexible	SNF	SNF Exfab Paul G Allen 151 Ocean
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF	SNF Cleanroom Paul G Allen L107	Pieces need a carrier wafer; Isotropic Etching
STS Plasma Enhanced CVD sts	STS Plasma Enhanced CVD Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Technics Asher technics	Technics Asher Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Teos2 teos2	Teos Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Very conformal.
Thermco1 thermco1	Thermco Oxidation Furnaces Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Thermco3 thermco 3	Thermco Oxidation Furnaces Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Thermco4 thermco4	Thermco Oxidation Furnaces Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
ThermcoLTO thermcoLTO	Thermco LTO Deposition Furnace Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	limits on material vapor pressure
ThermcoNitride thermconitride1	Thermco Nitride Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Stociometric and low stress (~150mPa) programs available
ThermcoPoly1 thermcopoly1	Thermco Poly Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
ThermcoPoly2 thermcopoly2	Thermco Poly Deposition Furnace Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Standard polysilicon deposition at 620C. P and N doping available.

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Objective Separation	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	C SiC SiN SiO₂	Si based materials Various C-based						Ar C₄F₈ CF₄ CHF₃ H₂ He N₂ O₂	4" 6"		1
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	Al Various	GaN						Ar BCl₃ CF₄ CH₄ Cl₂ N₂ O₂ SF₆	4" 6"		1
Plasmaetch PE-50 plasma-etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist							78% N₂, 21% O₂, ~1% Ar	Pieces 2" 3" 4" 6"		Multiple
Prometrix Resistivity Mapping System prometrix	Characterization > Sheet Resistance Measurement		All									2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist	Si based materials dimethylpolysiloxane Si SiN SiO₂ SiON Various polymers PI Poly Silicon					20 ºC	CF₄ O₂ SF₆	Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1 Å - 50 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia			24 °C - 250 °C	N₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer		All									Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Sinton Lifetime Tester sinton-lifetime-tester	Characterization > Minority Carrier Characterization		Flexible									Pieces 2" 3" 4" 6"
SPTS uetch vapor etch uetch	Etching > Vapor Etching		All	SiO₂							C₂H₅OH HF vapor	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
STS Plasma Enhanced CVD sts	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Nitride (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Oxide (PECVD)		Flexible			100 Å - 5 μm				350 ºC	2% SiH₄ in N₂ N₂ NH₃ O₂	Pieces 4" 6" 8"		Four 4 inch or one 6 inch or one 8 inch
Technics Asher technics	Etching > Dry Etching Cleaning > Resist Removal > Dry Resist Removal		Flexible	Resist	dimethylpolysiloxane poly(p-xylylene) PI						O₂	Pieces 4" 6" 8"	(Si) , (SiO2) , (SiO₂)	Four 4" wafers to pieces, one 6" or 8" wafer
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean									Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (GaAs) , (GaN) , (Ge) , (SiO₂) , (III-V) , (Al₂O₃)	1
Teos2 teos2	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD)	Pre-Diffusion Clean	Clean			50 Å - 5 μm	SiO₂			450 °C - 680 °C	N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	45
Thermco1 thermco1	Annealing & Oxidation > Furnaces > Furnace Annealing Annealing & Oxidation > Furnaces > Oxide Growth	Pre-Diffusion Clean	Clean			25 Å - 2 μm	SiO₂			700 °C - 1100 °C	H₂ N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	50
Thermco3 thermco 3	Annealing & Oxidation > Furnaces > Furnace Annealing Annealing & Oxidation > Furnaces > Oxide Growth	Pre-Diffusion Clean	Clean			25 Å - 2 μm	SiO₂			700 °C - 1100 °C	H₂ N₂ O₂	Pieces 2" 3" 4" 6"		50
Thermco4 thermco4	Annealing & Oxidation > Furnaces > Furnace Annealing Annealing & Oxidation > Furnaces > Oxide Growth		Flexible			25 Å - 2 μm	SiO₂			700 °C - 1100 °C	H₂ N₂ O₂	Pieces 2" 3" 4" 6"		50
ThermcoLTO thermcoLTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD) Doping		Flexible			100 Å - 3 μm	SiO₂			300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄	Pieces 4" 6"	(Si) , (SiGe) , (SiO2)	26
ThermcoNitride thermconitride1	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Nitride (LPCVD)	Pre-Diffusion Clean	Clean			100 Å - 2 μm	SiN			785 °C - 850 °C	N₂ NH₃ DCS	Pieces 2" 3" 4" 6"	(Si)	44
ThermcoPoly1 thermcopoly1	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Amorphous Silicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping	Pre-Diffusion Clean	Clean			100 Å - 3 μm	Ge Si SiGe Poly Silicon			525 °C - 650 °C	B₂H₆ H₂ N₂ PH₃ SiH₄	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	44
ThermcoPoly2 thermcopoly2	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Amorphous Silicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping	Pre-Diffusion Clean	Flexible			100 Å - 3 μm	Ge Si SiGe Poly Silicon			525 °C - 650 °C	B₂H₆ H₂ N₂ SiGe SiH₄	Pieces 2" 3" 4" 6"		44

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