Equipment name & Badger ID | Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Materials User Supplied | Minimum Resolution | Exposure Wavelength | Mask Size | Max Exposure Area | Resist | Objective Separation | Process Temperature Range | Chemicals | Gases | Sample Size Limits | Resolution Notes | Substrate Size | Substrate Type | Maximum Load |
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Heidelberg MLA 150 heidelberg |
All |
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405 nm |
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1 | |||||||||||||
Heidelberg MLA 150 - 2 heidelberg2 |
All |
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375 nm |
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1 | |||||||||||||
HMDS Vapor Prime Oven, YES yes |
All |
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150 ºC
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Innotec Evaporator Innotec |
Flexible |
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|
, , |
22 four inch wafers | ||||||||||||||
Intlvac Evaporation Intlvac_evap |
Clean, Semiclean |
0 -
1 μm
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|
, , |
12 4 inch wafers, 2 6 inch wafers | ||||||||||||||
Karl Suss MA-6 Contact Aligner 1 karlsuss |
All |
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365 nm | 4 inch, 5 inch, 7 inch | 5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch |
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Karl Suss MA-6 Contact Aligner 2 karlsuss2 |
All |
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365 nm or 405 nm | 4 inch, 5 inch, 7 inch | 5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch |
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Keyence Digital Microscope VHX-6000 keyence |
All |
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Laurell Manual Resist Spinner laurell-R |
All |
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|
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LEI1500 Contactless Sheet Resistance Mapping eddycurrent |
All |
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8 in wafer |
Sensor Transducer Size is 14 mm diameter |
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1 wafer(2" to 8") | ||||||||||||
Lesker Sputter lesker-sputter |
Flexible |
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1 4 inch wafer, 1 6 inch wafer | ||||||||||||||
Lesker2 Sputter lesker2-sputter |
Semiclean |
1 μm
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°C - 800 °C
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one 4 inch wafer, one 6 inch wafer | ||||||||||||||
Lithography Solvent Bench lithosolv |
Flexible |
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MRC Reactive Ion Etcher mrc |
Flexible |
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|
1 | |||||||||||||||
MVD mvd |
Flexible |
1 Å -
50 nm
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24 °C - 150 °C
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Nanospec 210XP nanospec2 |
All |
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Nanospec 3 nanospec3 |
Flexible |
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Optomec Printer optomec-printer |
Flexible |
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PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater |
Flexible |
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Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE |
Flexible |
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1 |