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4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

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Equipment name & NEMO ID Training Required & Chargessort descending Cleanliness Location Notes
EVG 101 Spray Coater
evgspraycoat
Spray Coater EVG 101 Training All SNF Cleanroom Paul G Allen L107

Spray coating of resists

Finetech Lambda
flipchipbonder
Flip Chip Bonder Training Flexible SNF Exfab Paul G Allen 104 Stinson
First Nano carbon nanotube CVD furnace
cvd-nanotube
cvd-nanotube training Flexible SNF Exfab Paul G Allen L119 Año Nuevo

Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density

Tylan9 Forming Gas Anneal Furnace
tylan9
Forming Gas Anneal Furnace Training Flexible SNF Cleanroom Paul G Allen L107

Any material that won't vaporize is okay. N2 and Ar annealing available.

Tylanfga Forming Gas Anneal Furnace
tylanfga
Forming Gas Anneal Furnace Training Semiclean SNF Cleanroom Paul G Allen L107

For standard metals deposited in Lesker2, Intlvac Sputter or Intlvac Evaporation only. N2 and Ar annealing available. Please contact staff for more information.

Gasonics Aura Asher
gasonics
Resist Removal Dry Gasonics Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.

Headway Manual Resist Spinner
headway2
Resist Coat (manual) Headway Manual Training All SNF Cleanroom Paul G Allen L107

Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists

Woollam
woollam
Woollam Training All SNF Cleanroom Paul G Allen L107
Karl Suss MA-6 Contact Aligner
karlsuss
Contact Aligner Karl Suss MA-6 Training All SNF Cleanroom Paul G Allen L107

1:1 Contact Aligner.
Backside align, including IR.

Karl Suss MA-6 Contact Aligner
karlsuss2
Contact Aligner Karl Suss MA-6 Training All SNF Cleanroom Paul G Allen L107

1:1 Contact Aligner.
Backside align.

Lam Research TCP 9400 Poly Etcher
lampoly
Lam Research TCP 9400 Poly Etcher Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.

Laurell Manual Resist Spinner
laurell-R
Laurell Manual Resist Spinner Training All SNF Cleanroom Paul G Allen L107

SU-8, LOL, Ebeam resists allowed. No Acetone allowed. 

Wet Bench Solvent Lithography
lithosolv
Lithography Solvent Bench Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.

Matrix Plasma Resist Strip
matrix
Matrix Plasma Resist Strip Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.

micromanipulator6000 IV-CV probe station
micromanipulator6000
micromanipulator6000 IV-CV probe station Training All SNF Exfab Paul G Allen 151 Ocean
MRC Reactive Ion Etcher
mrc
MRC Reactive Ion Etcher Training Flexible SNF Cleanroom Paul G Allen L107

Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode

Nanospec 210XP
nanospec2
Nanospec Training All SNF Exfab Paul G Allen 104 Stinson

Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Å

Optomec Printer
optomec-printer
Optomec Printer Training Flexible SNF Exfab Paul G Allen 155A Venice
Oxford Dielectric Etcher
oxford-rie
Oxford Dielectric Etcher Training Flexible SNF Cleanroom Paul G Allen L107

4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers

Oxford III-V etcher
Ox-35
Oxford III-V etcher Training Flexible SNF Cleanroom Paul G Allen L107

Metal etching or  Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.

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Equipment name & NEMO ID Technique Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Materials User Supplied Minimum Resolution Exposure Wavelength Mask Size Max Exposure Area Resist Process Temperature Range Chemicals Gases Sample Size Limits Resolution Notes Substrate Size Substrate Type Maximum Load
Gasonics Aura Asher
gasonics
Clean, Semiclean
25
Headway 3 Manual Resist Spinner
headway3
All 1 piece or wafer
Headway Manual Resist Spinner
headway2
All ,
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,
,
,
,
,
,
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one piece or wafer
Heidelberg MLA 150
heidelberg
All
405 nm ,
,
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1
Heidelberg MLA 150 - 2
heidelberg2
All
375 nm ,
,
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,
,
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,
1
HMDS Vapor Prime Oven, YES
yes
All
150 ºC
,
,
,
,
,
,
,
,
Intlvac Evaporator
Intlvac_evap
Clean, Semiclean
0.00 - 0.50 μm
,
,
12 4 inch wafers, 2 6 inch wafers
Karl Suss MA-6 Contact Aligner
karlsuss
All
365 nm 4 inch, 5 inch, 7 inch 5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch ,
,
,
,
,
,
,
,
,
Karl Suss MA-6 Contact Aligner
karlsuss2
All
365 nm or 405 nm 4 inch, 5 inch, 7 inch 5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch ,
,
,
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,
,
Keyence Digital Microscope VHX-6000
keyence
All ,
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,
,
,
,
Lam Research TCP 9400 Poly Etcher
lampoly
Clean, Semiclean
,
25
Laurell Manual Resist Spinner
laurell-R
All
LEI1500 Contactless Sheet Resistance Mapping
eddycurrent
All 8 in wafer

Sensor Transducer Size is 14 mm diameter 

,
,
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1 wafer(2" to 8")
Lesker Sputter
lesker-sputter
Flexible ,
,
,
,
,
,
,
,
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1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter
lesker2-sputter
Semiclean
1.00 μm
°C - 800 °C
,
,
,
,
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one 4 inch wafer, one 6 inch wafer
Matrix Plasma Resist Strip
matrix
Flexible
,
,
,
,
25
micromanipulator6000 IV-CV probe station
micromanipulator6000
All ,
,
,
,
,
,
,
,
,
,
,
1x4" wafer
MRC Reactive Ion Etcher
mrc
Flexible 1
MVD
mvd
Flexible
1.00 Å - 50.00 nm
24 °C - 150 °C
Nanospec 210XP
nanospec2
All ,
,
,
,
,
,
,
,

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