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4 inch wafer

Short Name:

4"

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Resist should have been removed
Wet Bench Clean_res-hf wbclean_res-hf	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Resist as mask allowed
Wet Bench Clean_res-piranha wbclean_res-piranha	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Resist will be removed
Wet Bench Clean 2 wbclean-2	Wet Bench Clean 1 and 2 Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha
Wet Bench Clean 1 wbclean-1	Wet Bench Clean 1 and 2 Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha.
Ex Fab Solvent Wet Bench wbexfab_solv	WbExfab_Solv Training	Flexible	SNF	SNF Exfab Paul G Allen 104 Stinson
Ex Fab Develop Wet Bench wbexfab_dev	WbExfab_Dev Training	Flexible	SNF	SNF Exfab Paul G Allen 104 Stinson
Thermco4 thermco4	Thermco Oxidation Furnaces Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Thermco1 thermco1	Thermco Oxidation Furnaces Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Thermco3 thermco 3	Thermco Oxidation Furnaces Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Develop Track 1 svgdev	SVG Resist Develop tracks 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
SVG Resist Coat Track 1 svgcoat	SVG Resist Coat Tracks 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	Automatic Resist spinning and bake
STS Plasma Enhanced CVD sts	STS Plasma Enhanced CVD Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
STS Deep RIE Etcher stsetch	STS Deep RIE Etcher Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	4" wafers; pieces should be attached to the carrier wafer for etching; need to use the holder assembly for through wafer etching
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF	SNF Cleanroom Paul G Allen L107	Pieces need a carrier wafer; Isotropic Etching
Sinton Lifetime Tester sinton-lifetime-tester	Sinton Lifetime Tester Training	Flexible	SNF	SNF Exfab Paul G Allen 151 Ocean
Prometrix Resistivity Mapping System prometrix	Prometrix Training	All	SNF	SNF Cleanroom Paul G Allen L107	3 Probe Heads for different Cleanliness

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Minimum Resolution	Resist	Objective Separation	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Laurell Manual Resist Spinner laurell-R	Optical Photolithography > Resist coat > Resist Coat (manual)		All							Resists SU-8 LOL			(C₅O₂H₈)_n				Pieces 2" 3" 4" 6"
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement		All												8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Flexible				Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Semiclean			1 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly					°C - 800 °C		Ar N₂ O₂			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
Lithography Solvent Bench lithosolv	Cleaning > Solvent Cleaning		Flexible										Solvents				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Matrix Plasma Resist Strip matrix	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal		Flexible	Resist	PI									O₂			4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	25
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization		All														Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
MRC Reactive Ion Etcher mrc	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Metals Various Dielectrics	Metal oxides PI									Ar CHClF₂ CHF₃ O₂ SF₆			Pieces 2" 3" 4" 6"		1
MVD mvd	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1 Å - 50 nm	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS					24 °C - 150 °C		Ar			Pieces 2" 3" 4" 6" 8"
Nanospec 210XP nanospec2	Characterization > Reflectometry		All														Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Nanospec 3 nanospec3	Characterization > Reflectometry		Flexible														Pieces 2" 3" 4" 6"
Optomec Printer optomec-printer	Deposition > Ink		Flexible														Pieces 2" 3" 4" 6"
Oxford Dielectric Etcher oxford-rie	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	SiC SiN SiO₂ PI	C									Ar CF₄ CHF₃ N₂ O₂ SF₆			4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
Oxford III-V etcher Ox-35	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	GaAs	AlGaN AlInP GaN InGaP InSb									Ar BCl₃ CH₄ Cl₂ H₂ HBr N₂ O₂ SF₆			4"		1
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition		Flexible				poly(p-xylylene)										Pieces 2" 3" 4" 6" 8" Cones Disks Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	Si										Ar C₄F₈ O₂ SF₆			4" 6"		1
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	C SiC SiN SiO₂	Si based materials Various C-based									Ar C₄F₈ CF₄ CHF₃ H₂ He N₂ O₂			4" 6"		1
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	Al Various	GaN									Ar BCl₃ CF₄ CH₄ Cl₂ N₂ O₂ SF₆			4" 6"		1
Plasmaetch PE-50 plasma-etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist										78% N₂, 21% O₂, ~1% Ar			Pieces 2" 3" 4" 6"		Multiple
PlasmaTherm Shuttlelock PECVD System ccp-dep	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Amorphous Silicon (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Nitride (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Oxide (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Silicon Carbide (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Silicon Oxynitride (PECVD)	Special: See Notes	All			100 Å - 4 μm						100 °C - 350 °C		5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous			4"		4

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