Equipment name & NEMO ID | Technique | Cleaning Required | Cleanliness | Material Thickness Range | Materials Lab Supplied | Minimum Resolution | Exposure Wavelength | Mask Size | Max Exposure Area | Resist | Developer | Process Temperature Range | Chemicals | Gases | Substrate Size | Substrate Type | Maximum Load |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Ex Fab Solvent Wet Bench wbexfab_solv |
Flexible | ||||||||||||||||
Ex Fab Develop Wet Bench wbexfab_dev |
Flexible | ||||||||||||||||
EVG Wafer Bonder evbond |
Flexible |
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EVG Contact Aligner evalign |
All |
|
350 - 450 nm | 5 inch, 7 inch | 5 inch mask = 4 inch, 7 inch mask = 6 inch |
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one piece or wafer | ||||||||||
EVG 101 Spray Coater evgspraycoat |
All |
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1 | ||||||||||||||
DISCO Wafer Saw DISCO wafersaw |
Flexible |
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1x4", 1x6" or 1x8" wafer, or pieces | ||||||||||||||
Critical Point Dryer Tousimis Automegasamdri-915B cpd |
Flexible |
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ASML PAS 5500/60 i-line Stepper asml |
All |
|
365 nm | 5 inch |
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AMAT Centurion Epitaxial System epi2 |
Pre-Diffusion Clean | Clean |
50.00 Å -
3.00 μm
|
600 °C - 1200 °C
|
1 | ||||||||||||
AJA2 Evaporator aja2-evap |
Semiclean |
0.00 -
300.00 nm
|
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4"x3 or 6"x1 wafers or pieces | |||||||||||||
AJA Evaporator aja-evap |
Flexible |
0.00 -
300.00 nm
|
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4"x3 or 6"x1 wafers or pieces | |||||||||||||
Aixtron MOCVD - III-V system aix200 |
Pre-Diffusion Clean | Flexible |
0.00 -
5.00 μm
|
300 °C - 800 °C
|
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4"x1 wafer or 2"x1 wafer or 4 pieces | |||||||||||
Aixtron MOCVD - III-N system aix-ccs |
Clean (MOCVD) |
0.00 -
5.00 μm
|
400 °C - 1300 °C
|
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4"x1, 2"X3, pieces | ||||||||||||
Aixtron Black Magic graphene CVD furnace aixtron-graphene |
Flexible |
800 °C - 1100 °C
|
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1x4" wafer or Copper/Nickel foil |