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4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

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Equipment name & NEMO IDsort ascending Training Required & Charges Cleanliness Location Notes
Ex Fab Solvent Wet Bench
wbexfab_solv
WbExfab_Solv Training Flexible SNF Exfab Paul G Allen 104 Stinson
Ex Fab Develop Wet Bench
wbexfab_dev
WbExfab_Dev Training Flexible SNF Exfab Paul G Allen 104 Stinson

Manual development of resist in beakers. SNF approved developers only. No solvents!

EVG Wafer Bonder
evbond
Wafer Bonder EVG Training Flexible SNF Cleanroom Paul G Allen L107
EVG Contact Aligner
evalign
Contact Aligner EVG Training All SNF Cleanroom Paul G Allen L107

1:1 Contact Aligner.
Anodic Bond, backside align, including IR.

EVG 101 Spray Coater
evgspraycoat
Spray Coater EVG 101 Training All SNF Cleanroom Paul G Allen L107

Spray coating of resists

DISCO Wafer Saw
DISCO wafersaw
Wafersaw DISCO training Flexible SNF Exfab Paul G Allen 159 Capitola
Critical Point Dryer Tousimis Automegasamdri-915B
cpd
Critical Point Dryer Training Flexible SNF Cleanroom Paul G Allen L107

CO2 drying after release of micromachined devices

ASML PAS 5500/60 i-line Stepper
asml
Stepper ASML PAS 5500/60 i-line Training All SNF Cleanroom Paul G Allen L107

5:1 reducing stepper

AMAT Centurion Epitaxial System
epi2
Epitaxial AMAT Centurion Training Clean SNF Cleanroom Paul G Allen L107

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

AJA2 Evaporator
aja2-evap
Evaporator AJA2 Semiclean SNF Cleanroom Paul G Allen L107

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

AJA Evaporator
aja-evap
Evaporator AJA training Flexible SNF Exfab Paul G Allen 155A Venice

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

Aixtron MOCVD - III-V system
aix200
MOCVD - III-V Aixtron training Flexible SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or HF dip.

Aixtron MOCVD - III-N system
aix-ccs
MOCVD - III-N Aixtron training Clean (MOCVD) SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

Aixtron Black Magic graphene CVD furnace
aixtron-graphene
CVD graphene furnace Aixtron Black Magic training Flexible SNF Exfab Paul G Allen L119 Año Nuevo

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Equipment name & NEMO IDsort ascending Technique Cleaning Required Cleanliness Material Thickness Range Materials Lab Supplied Minimum Resolution Exposure Wavelength Mask Size Max Exposure Area Resist Developer Process Temperature Range Chemicals Gases Substrate Size Substrate Type Maximum Load
Ex Fab Solvent Wet Bench
wbexfab_solv
Flexible
Ex Fab Develop Wet Bench
wbexfab_dev
Flexible
EVG Wafer Bonder
evbond
Flexible ,
,
,
,
,
EVG Contact Aligner
evalign
All
350 - 450 nm 5 inch, 7 inch 5 inch mask = 4 inch, 7 inch mask = 6 inch ,
,
,
,
one piece or wafer
EVG 101 Spray Coater
evgspraycoat
All ,
,
,
,
1
DISCO Wafer Saw
DISCO wafersaw
Flexible ,
,
,
,
,
,
,
,
1x4", 1x6" or 1x8" wafer, or pieces
Critical Point Dryer Tousimis Automegasamdri-915B
cpd
Flexible
,
,
,
,
,
,
,
,
,
ASML PAS 5500/60 i-line Stepper
asml
All
365 nm 5 inch
,
,
,
,
AMAT Centurion Epitaxial System
epi2
Pre-Diffusion Clean Clean
50.00 Å - 3.00 μm
600 °C - 1200 °C
1
AJA2 Evaporator
aja2-evap
Semiclean
0.00 - 300.00 nm
,
,
,
,
,
4"x3 or 6"x1 wafers or pieces
AJA Evaporator
aja-evap
Flexible
0.00 - 300.00 nm
,
,
,
,
,
,
,
,
,
,
,
4"x3 or 6"x1 wafers or pieces
Aixtron MOCVD - III-V system
aix200
Pre-Diffusion Clean Flexible
0.00 - 5.00 μm
300 °C - 800 °C
,
,
,
4"x1 wafer or 2"x1 wafer or 4 pieces
Aixtron MOCVD - III-N system
aix-ccs
Clean (MOCVD)
0.00 - 5.00 μm
400 °C - 1300 °C
,
,
,
4"x1, 2"X3, pieces
Aixtron Black Magic graphene CVD furnace
aixtron-graphene
Flexible
800 °C - 1100 °C
,
1x4" wafer or Copper/Nickel foil

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