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4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

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Equipment name & NEMO IDsort ascending Training Required & Charges Cleanliness Location Notes
PlasmaTherm Shuttlelock PECVD System
ccp-dep
PlasmaTherm Shuttlelock PECVD System Training All SNF Cleanroom Paul G Allen L107

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

Plasmaetch PE-50
plasma-etch
Plasmaetch PE-50 Training Flexible SNF Exfab Paul G Allen 155 Mavericks

Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment At SNF - nSiL lab

Plasma Therm Versaline LL ICP Metal Etcher
PT-MTL
Plasma Therm Versaline LL ICP Metal Etcher Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)

Plasma Therm Versaline LL ICP Dielectric Etcher
PT-Ox
Plasma Therm Versaline LL ICP Dielectric Etcher Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)

Plasma Therm Versaline LL ICP Deep Silicon Etcher
PT-DSE
Plasma Therm Versaline LL ICP Deep Silicon Etcher Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; need a support wafer for through wafer etching, can be used for Isotropic Si Etching

PDS 2010 LABCOTER™ 2 Parylene Deposition System
parcoater
Parylene Coater Training Flexible SNF Exfab Paul G Allen 155 Mavericks
Oxford III-V etcher
Ox-35
Oxford III-V etcher Training Flexible SNF Cleanroom Paul G Allen L107

Metal etching or  Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.

Oxford Dielectric Etcher
oxford-rie
Oxford Dielectric Etcher Training Flexible SNF Cleanroom Paul G Allen L107

4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers

Oven BlueM 200°C to 430°C
bluem
Blue M Oven Training Flexible SNF Cleanroom Paul G Allen L107

Convection in N2. Cure. Programmable.

Oven 90°C prebake
oven90
Resist Prebake Oven 90°C Training All SNF Cleanroom Paul G Allen L107

Bakes wafers after resist coating.

Oven 110°C post-bake
oven110
Resist Postbake Oven 110°C Training All SNF Cleanroom Paul G Allen L107

Bakes wafers with resist after the development, called post-bake.

Oven (White)
white-oven
White Oven Training Flexible SNF Cleanroom Paul G Allen L107

For LOL2000 bake or bakes which are not allowed in the other ovens and need higher temperatures, up to 200C, programmable.

Optomec Printer
optomec-printer
Optomec Printer Training Flexible SNF Exfab Paul G Allen 155A Venice
Nanospec 3
nanospec3
Nanospec 3 Training All SNF Cleanroom Paul G Allen L107
Nanospec 210XP
nanospec2
Nanospec Training All SNF Exfab Paul G Allen 104 Stinson

Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Å

MVD
mvd
MVD Training Flexible SNF Cleanroom Paul G Allen L107

Reactor located inside glovebox

MRC Reactive Ion Etcher
mrc
MRC Reactive Ion Etcher Training Flexible SNF Cleanroom Paul G Allen L107

Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode

micromanipulator6000 IV-CV probe station
micromanipulator6000
micromanipulator6000 IV-CV probe station Training All SNF Exfab Paul G Allen 151 Ocean
Matrix Plasma Resist Strip
matrix
Matrix Plasma Resist Strip Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.

Lesker2 Sputter
lesker2-sputter
Sputter Lesker 1&2 Training Semiclean SNF Cleanroom Paul G Allen L107

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

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Equipment name & NEMO IDsort ascending Technique Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
PlasmaTherm Shuttlelock PECVD System
ccp-dep
All
100.00 Å - 4.00 μm
100 °C - 350 °C
,
,
,
,
,
,
,
,
4
Plasmaetch PE-50
plasma-etch
Flexible Multiple
Plasma Therm Versaline LL ICP Metal Etcher
PT-MTL
Flexible
1
Plasma Therm Versaline LL ICP Dielectric Etcher
PT-Ox
Flexible
1
Plasma Therm Versaline LL ICP Deep Silicon Etcher
PT-DSE
Flexible
1
PDS 2010 LABCOTER™ 2 Parylene Deposition System
parcoater
Flexible ,
,
,
,
,
,
,
,
,
,
,
,
Oxford III-V etcher
Ox-35
Flexible
1
Oxford Dielectric Etcher
oxford-rie
Flexible
,
,
,
,
1
Oven BlueM 200°C to 430°C
bluem
Flexible
0 °C - 430 °C
,
,
,
,
,
,
,
,
,
Oven 90°C prebake
oven90
All
90 ºC
,
,
,
,
,
,
,
,
Oven 110°C post-bake
oven110
All
110 ºC
,
,
,
,
,
,
,
,
,
Oven (White)
white-oven
Flexible
0 °C - 200 °C
,
,
,
,
,
,
,
,
Optomec Printer
optomec-printer
Flexible
Nanospec 3
nanospec3
All
Nanospec 210XP
nanospec2
All ,
,
,
,
,
,
,
,
MVD
mvd
Flexible
1.00 Å - 50.00 nm
24 °C - 150 °C
MRC Reactive Ion Etcher
mrc
Flexible 1
micromanipulator6000 IV-CV probe station
micromanipulator6000
All ,
,
,
,
,
,
,
,
,
,
,
1x4" wafer
Matrix Plasma Resist Strip
matrix
Flexible
,
,
,
,
25
Lesker2 Sputter
lesker2-sputter
Semiclean
1.00 μm
°C - 800 °C
,
,
,
,
,
,
,
,
,
one 4 inch wafer, one 6 inch wafer

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