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4 inch wafer

Short Name:

4"

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
Laurell Manual Resist Spinner laurell-R	Laurell Manual Resist Spinner Training	All	SNF	SNF Cleanroom Paul G Allen L107	SU-8, LOL, Ebeam resists allowed. No Acetone allowed.
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	LEI1500 Contactless Sheet Resistance Mapping Training	All	SNF	SNF Exfab Paul G Allen 151 Ocean
Lesker Sputter lesker-sputter	Lesker Sputter Training	Flexible	SNF Exfab	SNF Exfab Paul G Allen 155A Venice	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Lesker2 Sputter lesker2-sputter	Lesker2 Sputter Training	Semiclean	SNF	SNF Cleanroom Paul G Allen L107	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Lithography Solvent Bench lithosolv	Lithography Solvent Bench Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning of substrates or masks. Teflon coated metal tweezers cleaning.
Matrix Plasma Resist Strip matrix	Matrix Plasma Resist Strip Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.
micromanipulator6000 IV-CV probe station micromanipulator6000	micromanipulator6000 IV-CV probe station Training	All	SNF	SNF Exfab Paul G Allen 151 Ocean
MRC Reactive Ion Etcher mrc	MRC Reactive Ion Etcher Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
MVD mvd	MVD Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Reactor located inside glovebox
Nanospec 210XP nanospec2	Nanospec Training	All	SNF	SNF Exfab Paul G Allen 104 Stinson	Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
Nanospec 3 nanospec3	Nanospec 3 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Optomec Printer optomec-printer	Optomec Printer Training	Flexible	SNF	SNF Exfab Paul G Allen 155A Venice
Oxford Dielectric Etcher oxford-rie	Oxford Dielectric Etcher Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
Oxford III-V etcher Ox-35	Oxford III-V etcher Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Parylene Coater Training	Flexible	SNF	SNF Exfab Paul G Allen 155 Mavericks
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Plasma Therm Versaline LL ICP Deep Silicon Etcher Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; need a support wafer for through wafer etching, can be used for Isotropic Si Etching
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Plasma Therm Versaline LL ICP Dielectric Etcher Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Plasma Therm Versaline LL ICP Metal Etcher Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Plasmaetch PE-50 plasma-etch	Plasmaetch PE-50 Training	Flexible	SNF	SNF Exfab Paul G Allen 155 Mavericks	Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment At SNF - nSiL lab
PlasmaTherm Shuttlelock PECVD System ccp-dep	PlasmaTherm Shuttlelock PECVD System Training	All	SNF	SNF Cleanroom Paul G Allen L107	To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Minimum Resolution	Resist	Objective Separation	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Laurell Manual Resist Spinner laurell-R	Optical Photolithography > Resist coat > Resist Coat (manual)		All							Resists SU-8 LOL			(C₅O₂H₈)_n				Pieces 2" 3" 4" 6"
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement		All												8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Flexible				Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering		Semiclean			1 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly					°C - 800 °C		Ar N₂ O₂			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
Lithography Solvent Bench lithosolv	Cleaning > Solvent Cleaning		Flexible										Solvents				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Matrix Plasma Resist Strip matrix	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal		Flexible	Resist	PI									O₂			4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	25
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization		All														Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
MRC Reactive Ion Etcher mrc	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Metals Various Dielectrics	Metal oxides PI									Ar CHClF₂ CHF₃ O₂ SF₆			Pieces 2" 3" 4" 6"		1
MVD mvd	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1 Å - 50 nm	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS					24 °C - 150 °C		Ar			Pieces 2" 3" 4" 6" 8"
Nanospec 210XP nanospec2	Characterization > Reflectometry		All														Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Nanospec 3 nanospec3	Characterization > Reflectometry		Flexible														Pieces 2" 3" 4" 6"
Optomec Printer optomec-printer	Deposition > Ink		Flexible														Pieces 2" 3" 4" 6"
Oxford Dielectric Etcher oxford-rie	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	SiC SiN SiO₂ PI	C									Ar CF₄ CHF₃ N₂ O₂ SF₆			4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
Oxford III-V etcher Ox-35	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	GaAs	AlGaN AlInP GaN InGaP InSb									Ar BCl₃ CH₄ Cl₂ H₂ HBr N₂ O₂ SF₆			4"		1
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition		Flexible				poly(p-xylylene)										Pieces 2" 3" 4" 6" 8" Cones Disks Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	Si										Ar C₄F₈ O₂ SF₆			4" 6"		1
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	C SiC SiN SiO₂	Si based materials Various C-based									Ar C₄F₈ CF₄ CHF₃ H₂ He N₂ O₂			4" 6"		1
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)		Flexible	Al Various	GaN									Ar BCl₃ CF₄ CH₄ Cl₂ N₂ O₂ SF₆			4" 6"		1
Plasmaetch PE-50 plasma-etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist										78% N₂, 21% O₂, ~1% Ar			Pieces 2" 3" 4" 6"		Multiple
PlasmaTherm Shuttlelock PECVD System ccp-dep	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Amorphous Silicon (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Nitride (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Oxide (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Silicon Carbide (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Silicon Oxynitride (PECVD)	Special: See Notes	All			100 Å - 4 μm						100 °C - 350 °C		5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous			4"		4

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