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4 inch wafer

Short Name:

4"

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
110°C Oven oven110	110°C Oven Training	All	SNF	SNF Cleanroom Paul G Allen L107	Bakes wafers with resist after the development, called post-bake.
90°C Oven oven90	90°C Oven Training	All	SNF	SNF Cleanroom Paul G Allen L107	Bakes wafers after resist coating.
Aix-ccs aix-ccs	Aixtron MOCVD - III-N system training	Clean (MOCVD)	SNF	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Aix200 aix200	Aixtron MOCVD - III-V system training	Flexible	SNF	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Aixtron Black Magic graphene CVD furnace aixtron-graphene	Aixtron Black Magic graphene CVD furnace training	Flexible	SNF	SNF Exfab Paul G Allen L119 Año Nuevo
AJA Evaporator aja-evap	AJA Evaporation training	Flexible	SNF	SNF Exfab Paul G Allen 155A Venice	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
AJA2 Evaporator aja2-evap	AJA2 Evaporator	Semiclean	SNF	SNF Cleanroom Paul G Allen L107	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Alphastep 500 Profilometer alphastep	Alphastep 500 Profilometer Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	500Å to 300µm
AMT Oxide Plasma Etcher amtetcher	AMT Oxide Plasma Etcher Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Batch processing tool with hexode configuration; pieces need to be mounted on a carrier wafer for etching
ASML PAS 5500/60 i-line Stepper asml	ASML PAS 5500/60 i-line Stepper Training	All	SNF	SNF Cleanroom Paul G Allen L107	5:1 reducing stepper
Aw610_l aw610_l	AllWin 610 RTA Training	Clean	SNF	SNF Cleanroom Paul G Allen L107
Aw610_r aw610_r	AllWin 610 RTA Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Blue M Oven bluem	Blue M Oven Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Convection in N2. Cure. Programmable.
Critical Point Dryer cpd	Critical Point Dryer Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	CO2 drying after release of micromachined devices
Digital Instruments AFM Nanoscope Dimension 3000 afm2	Digital Instruments AFM Nanoscope Dimension 3000 Training	All	SNF	SNF Exfab Paul G Allen 104 Stinson	Atomic Force Microscope. Step Profile
DISCO Wafer Saw DISCO wafersaw	DISCO wafersaw training	Flexible	SNF	SNF Exfab Paul G Allen 159 Capitola
Drytek 100 Plasma Etcher drytek2	Drytek 100 Plasma Etcher Training	All	SNF	SNF Cleanroom Paul G Allen L107	Batch processing tool; 6 stacked electrodes; no clamp; wafers and pieces can be loaded directly on the grounded electrode
Ebeam Process Wet Bench wbebres	Ebeam Process Wet Bench Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Manual developing of Ebeam resist
Epi2 epi2	AMAT Centurion Epitaxial Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
EV Group Contact Aligner evalign	EV Group Contact Aligner Training	All	SNF	SNF Cleanroom Paul G Allen L107	1:1 Contact Aligner. Anodic Bond, backside align, including IR.

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Objective Separation	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
110°C Oven oven110	Optical Photolithography > Resist Bake > Oven Bake > Post Bake		All										110 ºC			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
90°C Oven oven90	Optical Photolithography > Resist Bake > Oven Bake > Prebake		All										90 ºC			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Aix-ccs aix-ccs	Deposition > Deposited III-N Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Special: See Notes	Clean (MOCVD)			0 - 5 μm	AlGaN AlN GaN InAlN InGaAlN InGaN InN						400 °C - 1300 °C		H₂ MO sources N₂ NH₃ SiH₄	Pieces 2" 4"	(Si) , (Al₂O₃) , (SiC) , (GaN)	4"x1, 2"X3, pieces
Aix200 aix200	Deposition > Deposited III-V Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Pre-Diffusion Clean, Special: See Notes	Flexible			0 - 5 μm	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN						300 °C - 800 °C		H₂ MO sources N₂ SiH₄	Pieces 2" 3" 4"	(Si) , (SiO2) , (III-V) , (GaAs)	4"x1 wafer or 2"x1 wafer or 4 pieces
Aixtron Black Magic graphene CVD furnace aixtron-graphene	Deposition > Chemical Vapor Deposition (CVD) > Graphene CVD Growth		Flexible				C						800 °C - 1100 °C		78% N₂, 21% O₂, ~1% Ar CH₄ H₂	Pieces 2" 3" 4"	(Si) , (Various)	1x4" wafer or Copper/Nickel foil
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible			0 - 300 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Alumina Titania									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	4"x3 or 6"x1 wafers or pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Semiclean			0 - 300 nm	Ag Al Co Cr Ge Hf Nb Pd Pt Si Ta Ti V W Zr Moly									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
Alphastep 500 Profilometer alphastep	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible													Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
AMT Oxide Plasma Etcher amtetcher	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Clean, Semiclean	Si SiN SiO₂ Resist	C SiC SiON PI										Ar CHF₃ NF₃ O₂ SF₆	4"	(Si)	24
ASML PAS 5500/60 i-line Stepper asml	Optical Photolithography > Exposure > Stepper		All						365 nm	5 inch						4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)
Aw610_l aw610_l	Annealing & Oxidation > Rapid Thermal Annealing	Pre-Diffusion Clean	Clean										21 °C - 1150 °C		4% H₂ in N₂ Ar N₂ NH₃ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	1 wafer
Aw610_r aw610_r	Annealing & Oxidation > Rapid Thermal Annealing		Flexible										21 °C - 1150 °C		4% H₂ in N₂ Ar N₂ NH₃ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)
Blue M Oven bluem	Optical Photolithography > Resist Bake > Oven Bake		Flexible										0 °C - 430 °C			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Critical Point Dryer cpd	Drying > CO2 Drying		Flexible											CO₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
Digital Instruments AFM Nanoscope Dimension 3000 afm2	Characterization > Surface Analysis > Profilometer > Atomic Force Microscopy (AFM)		All													Pieces 2" 3" 4"
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw		Flexible													Pieces 2" 3" 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1x4", 1x6" or 1x8" wafer, or pieces
Drytek 100 Plasma Etcher drytek2	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching		All	Si SiN Poly Silicon Resist	C SiO₂ PI										CF₄ CHClF₂ O₂ SF₆	Pieces 2" 3" 4" 6"		6
Ebeam Process Wet Bench wbebres	Optical Photolithography > Resist Develop > Resist Develop (manual)		Flexible											Solvents		Pieces 2" 3" 4"
Epi2 epi2	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Amorphous Silicon (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping Deposition > Chemical Vapor Deposition (CVD) > Epi Annealing & Oxidation > Hydrogen (H2) Annealing	Pre-Diffusion Clean	Clean			50 Å - 3 μm	Ge Si SiGe Poly Silicon						600 °C - 1200 °C		AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	4"		1
EV Group Contact Aligner evalign	Optical Photolithography > Exposure > Contact Aligner		All						350 - 450 nm	5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	one piece or wafer

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