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2 inch wafer

Short Name:

2"

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Location	Notes
Oven 110°C post-bake oven110	110°C Oven Training	All	SNF Cleanroom Paul G Allen L107	Bakes wafers with resist after the development, called post-bake.
Oven 90°C prebake oven90	90°C Oven Training	All	SNF Cleanroom Paul G Allen L107	Bakes wafers after resist coating.
Oven BlueM 200°C to 430°C bluem	Blue M Oven Training	Flexible	SNF Cleanroom Paul G Allen L107	Convection in N2. Cure. Programmable.
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Parylene Coater Training	Flexible	SNF Exfab Paul G Allen 155 Mavericks
Plasmaetch PE-50 plasma-etch	Plasmaetch PE-50 Training	Flexible	SNF Exfab Paul G Allen 155 Mavericks	Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment At SNF - nSiL lab
Prometrix Resistivity Mapping System prometrix	Prometrix Training	All	SNF Cleanroom Paul G Allen L107	3 Probe Heads for different cleanliness groups.
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF Cleanroom Paul G Allen L107
Savannah ALD savannah	Savannah Training	Flexible	SNF Cleanroom Paul G Allen L107
Sensofar S-neox s-neox	Sensofar S-neox Training	All	SNF Cleanroom Paul G Allen L107	non contact 3D optical profiling
Sinton Lifetime Tester sinton-lifetime-tester	Sinton Lifetime Tester Training	Flexible	SNF Exfab Paul G Allen 151 Ocean
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF Cleanroom Paul G Allen L107	Pieces need a carrier wafer; Isotropic Etching
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Thermco Nitride Deposition Furnace LPCVD thermconitride1	Thermco Nitride Deposition Furnace Training	Clean	SNF Cleanroom Paul G Allen L107	Stociometric and low stress (~150mPa) programs available
Thermco1 Oxidation Furnace thermco1	Thermco Oxidation Furnaces Training	Clean	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Thermco3 Oxidation Furnace thermco 3	Thermco Oxidation Furnaces Training	Clean	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
Thermco4 Oxidation Furnace thermco4	Thermco Oxidation Furnaces Training	Flexible	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
ThermcoPoly1 thermcopoly1	Thermco Poly Deposition Furnace Training	Clean	SNF Cleanroom Paul G Allen L107	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
ThermcoPoly2 thermcopoly2	Thermco Poly Deposition Furnace Training	Flexible	SNF Cleanroom Paul G Allen L107	Standard polysilicon deposition at 620C. P and N doping available.
Tousimis Automegasamdri-915B Critical Point Dryer cpd	Critical Point Dryer Training	Flexible	SNF Cleanroom Paul G Allen L107	CO2 drying after release of micromachined devices
Tylan9 Forming Gas Anneal Furnace tylan9	Forming Gas Anneal Furnace Training	Flexible	SNF Cleanroom Paul G Allen L107	Any material that won't vaporize is okay. N2 and Ar annealing available.

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Oven 110°C post-bake oven110	Optical Photolithography > Resist Bake > Oven Bake > Resist Post Bake		All					110 ºC			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
Oven 90°C prebake oven90	Optical Photolithography > Resist Bake > Oven Bake > Resist Prebake		All					90 ºC			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven BlueM 200°C to 430°C bluem	Optical Photolithography > Resist Bake > Oven Bake		Flexible					0 °C - 430 °C			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition		Flexible				poly(p-xylylene)				Pieces 2" 3" 4" 6" 8" Cones Disks Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)
Plasmaetch PE-50 plasma-etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist						78% N₂, 21% O₂, ~1% Ar	Pieces 2" 3" 4" 6"		Multiple
Prometrix Resistivity Mapping System prometrix	Characterization > Sheet Resistance Measurement		All								2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI			20 ºC		CF₄ O₂ SF₆	Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	24 °C - 250 °C		N₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer		All								Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Sinton Lifetime Tester sinton-lifetime-tester	Characterization > Minority Carrier Characterization		Flexible								Pieces 2" 3" 4" 6"
SPTS uetch vapor etch uetch	Etching > Vapor Etching		All	SiO₂						C₂H₅OH HF vapor	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean								Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Thermco Nitride Deposition Furnace LPCVD thermconitride1	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			100.00 Å - 2.00 μm	Si3N4	785 °C - 850 °C		N₂ NH₃ DCS	Pieces 2" 3" 4" 6"	(Si)	44
Thermco1 Oxidation Furnace thermco1	Annealing & Oxidation > Annealing (furnace) Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂	700 °C - 1100 °C		H₂ N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	50
Thermco3 Oxidation Furnace thermco 3	Annealing & Oxidation > Annealing (furnace) Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂	700 °C - 1100 °C		H₂ N₂ O₂	Pieces 2" 3" 4" 6"		50
Thermco4 Oxidation Furnace thermco4	Annealing & Oxidation > Annealing (furnace) Annealing & Oxidation > Oxide Growth (furnace)		Flexible			25.00 Å - 2.00 μm	SiO₂	700 °C - 1100 °C		H₂ N₂ O₂	Pieces 2" 3" 4" 6"		50
ThermcoPoly1 thermcopoly1	Doping Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			100.00 Å - 3.00 μm	Ge Si SiGe	525 °C - 650 °C		B₂H₆ H₂ N₂ PH₃ SiH₄	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	44
ThermcoPoly2 thermcopoly2	Doping Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Flexible			100.00 Å - 3.00 μm	Ge Si SiGe	525 °C - 650 °C		B₂H₆ H₂ N₂ SiGe SiH₄	Pieces 2" 3" 4" 6"		44
Tousimis Automegasamdri-915B Critical Point Dryer cpd	Drying > CO2 Drying		Flexible						CO₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
Tylan9 Forming Gas Anneal Furnace tylan9	Annealing & Oxidation > Annealing (furnace)		Flexible				SiO₂	250 °C - 1100 °C		10% H₂ in N₂ Ar H₂ N₂ O₂	Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2)	50

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