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Vapor Phase Doping of Boron in Silicon

Project Type: 
E241
Date: 
June 2015
Areas of Interest: 
Alternative to implantation for boron doping of silicon using Epi
Function and Method: 
Researchers and (Mentors): 
Kai Zang, (Maurice Stevens), (Ted Kamins)
List of Important Equipment: 
Equipment name & Badger IDsort ascending Cleanliness Cleaning Required Gases Substrate Size Process Temperature Range Maximum Load (number of wafers) Notes
TylanBPSG
tylanbpsg
Clean, Semiclean Pre-Diffusion Clean, Standard Metal Clean
300 °C - 450 °C
26
ThermcoPoly2
thermcopoly2
Flexible Pre-Diffusion Clean
525 °C - 650 °C
44

Standard polysilicon deposition at 620C. P and N doping available.

ThermcoPoly1
thermcopoly1
Clean Pre-Diffusion Clean
525 °C - 650 °C
44

Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.

ThermcoLTO
thermcoLTO
Flexible
300 °C - 450 °C
26

limits on material vapor pressure

Epi2
epi2
Clean Pre-Diffusion Clean
600 °C - 1200 °C
1

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr