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Superconducting Parallel Plate Capacitors with High Kinetic Inductance

Project Type: 
E241
Date: 
March 2020
Areas of Interest: 
Superconductors, Capacitors
Report(s): 
F19- Superconducting Parallel Plate Capacitors with High Kinetic Inductance Final Report
W20- Superconducting Parallel Plate Capacitors with High Kinetic Inductance Final Report
Processing Technique (former Function and Method): 
Sputtering
Inductively Coupled Plasma Etching (ICP)
Researchers and (Mentors): 
Kevin Multani, Debadri Das, Hubert Stokowski, (Usha Raghuram), (Swaroop Kommera), (Don Gardner)
List of Important Equipment: 
Lesker Sputter (lesker-sputter)
Plasma Therm Versaline LL ICP Dielectric Etcher (PT-Ox)
Plasma Therm Versaline LL ICP Metal Etcher (PT-MTL)
Nano Nugget(s): 

Post-metal etch clean

Procedures for troubleshooting post Nb-etch residues on Sapphire wafers are described.

SOP- Niobium structures releasing

We worked out a method for releasing niobium structures with high yield.

Critical Point Drying SOP

The basic version of the Standard Operating Procedures for this tool is already available online but we propose a modified version that ensures higher yield of successful releasing and better overall cleanliness of the process on small chips:

Presentation(s): 
Superconducting Parallel Plate Capacitors with High Kinetic Inductance- Fall 2019 Final Presentation