Skip to content
Skip to navigation
SUNetID Login
SUNetID Login
Stanford Nanofabrication Facility
SNF is open under
New Normal Rules
. ANY shadowing must be coordinated with SNF staff first.
Stanford Nanofabrication Facility
Navigation menu
SNF Main Menu
SNF Home
About
Overview
Mission
History
NNCI
Lab Spaces
Visit
Join
Overview
Getting Started in the SNF labs
Contacts
Rates
How to Join
Forms
Discussion Lists
Storage
Lab User Guide
Main menu
Home
MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMT)
Project Type:
E241
Date:
December 2017
Areas of Interest:
HEMTS, InAlN/GaN on Si
Function and Method:
Deposited III-N
Researchers and (Mentors):
Thomas Heuser, Ricardo Peterson, (Xiaoqing Xu)
List of Important Equipment:
Aix-ccs (aix-ccs)
Presentation(s):
MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Presentation
Report(s):
MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Report
Printer-friendly version