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MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMT)

Project Type: 
E241
Date: 
December 2017
Areas of Interest: 
HEMTS, InAlN/GaN on Si
Function and Method: 
Deposited III-N
Researchers and (Mentors): 
Thomas Heuser, Ricardo Peterson, (Xiaoqing Xu)
List of Important Equipment: 
Aix-ccs (aix-ccs)
Presentation(s): 
MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Presentation
Report(s): 
MOCVD​ ​of​ ​InAlN/GaN​ ​on​ ​Si​ ​Heterostructures​ ​for High-Temperature​ ​High-Electron-Mobility​ ​Transistors (HEMTs)- Final Report