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MOCVD Growth Calibration for GaN LED on Silicon

Project Type: 
E241
Date: 
June 2015
Areas of Interest: 
III-V, MOCVD InGaN, GaN and AlGaN on silicon doping
Function and Method: 
Researchers and (Mentors): 
Yusi Chen, Jieyang Jia, (Xiaoxing Xu)
List of Important Equipment: