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Improve the performance of MOCVD grown GaN-on-Si HEMT structure
Project Type:
Community Service
Date:
September 2015
Report(s):
Improve the performance of MOCVD grown GaN-on-Si HEMT structure
Function and Method:
Deposited III-N
List of Important Equipment:
Aix-ccs (aix-ccs)
Materials
Aluminum Gallium Nitride (AlGaN)
Aluminum Nitride (AlN)
Gallium Nitride (GaN)
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