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High Aspect Ratio Si Etching in STS2

Project Type: 
E241
Date: 
December 2010
Areas of Interest: 
HAR Etch for STS2
Report(s): 
High Aspect Ratio Si Etching in STS2- Final Report
Processing Technique (former Function and Method): 
Dry Etching
Researchers and (Mentors): 
Jae-Woong Jeong, (Jim McVitte)
Presentation(s): 
High Aspect Ratio Si Etching in STS2- Final Presentation