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High Aspect Ratio Si Etching in STS2
Project Type:
E241
Date:
December 2010
Areas of Interest:
HAR Etch for STS2
Function and Method:
Dry Etching
Researchers and (Mentors):
Jae-Woong Jeong, (Jim McVitte)
Presentation(s):
High Aspect Ratio Si Etching in STS2- Final Presentation
Report(s):
High Aspect Ratio Si Etching in STS2- Final Report
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