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GaAs Rapid Melt Growth (RMG) process

Project Type: 
E241
Date: 
December 2015
Areas of Interest: 
Developing a GaAs Rapid Melt Growth (RMG) process to produce crystalline GaAs on silicon
Function and Method: 
Deposited III-V
Researchers and (Mentors): 
Xue Bai, (Xiaoxing Xu)
List of Important Equipment: 
Aix200 (aix200)
Presentation(s): 
A low-cost solution for III-V integration on Si- Final Presentation
Report(s): 
GaAs Rapid Melt Growth (RMG) process- Final Report