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Development of Fluorine Plasma for AlGa/GaN Device Isolation

Project Type: 
E241
Date: 
December 2014
Areas of Interest: 
Heterostructure based device isolation
Report(s): 
Development of Fluorine Plasma Treatment for AlGaN/GaN Device Isolation- Final Report
Processing Technique (former Function and Method): 
Other
Researchers and (Mentors): 
Caitlin Chapin, Minmin Hou, (Usha Raghuram), (Prof Senesky)
List of Important Equipment: 
Plasma Therm Versaline LL ICP Dielectric Etcher (PT-Ox)
Presentation(s): 
Development of Fluorine Plasma Treatment for AlGaN/GaN Device Isolation- Final Presentation