Skip to content
Skip to navigation
SUNetID Login
SUNetID Login
Stanford Nanofabrication Facility
SNF is open under
New Normal Rules
. ANY shadowing must be coordinated with SNF staff first.
Stanford Nanofabrication Facility
Navigation menu
SNF Main Menu
SNF Home
About
Overview
Mission
History
NNCI
Lab Spaces
Visit
Join
Overview
Getting Started in the SNF labs
Contacts
Rates
How to Join
Forms
Discussion Lists
Storage
Lab User Guide
Main menu
Home
Development of Fluorine Plasma for AlGa/GaN Device Isolation
Project Type:
E241
Date:
December 2014
Areas of Interest:
Heterostructure based device isolation
Function and Method:
Other
Researchers and (Mentors):
Caitlin Chapin, Minmin Hou, (Usha Raghuram), (Prof Senesky)
List of Important Equipment:
Plasma Therm Versaline LL ICP Dielectric Etcher (PT-Ox)
Presentation(s):
Development of Fluorine Plasma Treatment for AlGaN/GaN Device Isolation- Final Presentation
Report(s):
Development of Fluorine Plasma Treatment for AlGaN/GaN Device Isolation- Final Report
Printer-friendly version