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ALD Process for Top-Gating 2D Materials

Project Type: 
E241
Date: 
March 2020
Areas of Interest: 
2D Material integration, ALD, metal seed layers
Report(s): 
F19- ALD on MoS2 using Seed Layer Deposition & Characterization of Oxidized Seed Layer with ALD Aluminum Oxide Process Runsheet
Processing Technique (former Function and Method): 
Atomic Layer Deposition (ALD)
Researchers and (Mentors): 
Akash Levy, Jung-Soo Kim, (Michelle Rincon), (J Provine), (Vijay Narasimhan)
List of Important Equipment: 
Fiji 2 ALD (fiji2)
Lesker Sputter (lesker-sputter)
Nano Nugget(s): 

SOP for Seeded ALD deposition on MoS2

Standard operating procedures for seed layer aided ALD on 2D materials.

SOP for Seeded ALD depositions on MOSCAPS and MIMS structures on Silicon

Process to create electrical test structures using metal-seeded ALD layers on silicon substrates. 

Lesker2 Sputter TiN Initial Development

Our goal was to develop a process for sputtering of NVM-quality TiN using the new Lesker sputtering tool (Lesker-2) that resides inside the cleanroom. This tool can achieve the high-vacuum pressures necessary for TiN films with low levels of oxygen contamination.

Presentation(s): 
ALD Process for Top-Gating 2D Materials- Fall 2019 Final Presentation