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ALD Process for Top-Gating 2D Materials

Project Type: 
E241
Date: 
March 2020
Areas of Interest: 
2D Material integration, ALD, metal seed layers
Function and Method: 
Researchers and (Mentors): 
Akash Levy, Jung-Soo Kim, (Michelle Rincon), (J Provine), (Vijay Narasimhan)
List of Important Equipment: 
Nano Nugget(s): 

Standard operating procedures for seed layer aided ALD on 2D materials.

Process to create electrical test structures using metal-seeded ALD layers on silicon substrates. 

Our goal was to develop a process for sputtering of NVM-quality TiN using the new Lesker sputtering tool (Lesker-2) that resides inside the cleanroom. This tool can achieve the high-vacuum pressures necessary for TiN films with low levels of oxygen contamination.