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ALD Dielectric Electrical Characterization

Project Type: 
E241
Date: 
June 2014
Areas of Interest: 
High-k dielectrics, Al2O3, HfO, MOSCAP
Function and Method: 
Atomic Layer Deposition (ALD)
Researchers and (Mentors): 
Max Shulaker, (Michelle Rincon), (J Provine)
List of Important Equipment: 
Fiji 1 (fiji1)
Fiji 2 (fiji2)
Fiji 3 (fiji3)
Savannah (savannah)
Presentation(s): 
MOSCAP Characterization of SNF ALD- Final Presentation
Report(s): 
ALD Dielectric Electrical Characterization- Final Report