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Clean

The "Clean" cleanliness group is part of the SNF/ExFab contamination policy. For more information please click here.

The following is a list of equipment that fall into the "Clean" category.

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Equipment name & Badger ID Training Required & Chargessort descending Cleanliness Lab Organization Location Notes
Fiji 1
fiji1
Fiji 1 and 2 Training Semiclean
SNF
SNF Cleanroom Paul G Allen L107
Aix-ccs
aix-ccs
Aixtron MOCVD - III-N system training Clean (MOCVD)
SNF
SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

AJA2 Evaporator
aja2-evap
AJA2 Evaporator Semiclean
SNF
SNF Cleanroom Paul G Allen L107

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

Aw610_l
aw610_l
AllWin 610 RTA Training Clean
SNF
SNF Cleanroom Paul G Allen L107
Epi2
epi2
AMAT Centurion Epitaxial Training Clean
SNF
SNF Cleanroom Paul G Allen L107

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

AMAT P5000 Etcher
p5000etch
AMAT P5000 Etcher Training Clean, Clean (Ge), Semiclean
SNF
SNF Cleanroom Paul G Allen L107
Tylanfga
tylanfga
Forming Gas Anneal Furnace Training Semiclean
SNF
SNF Cleanroom Paul G Allen L107

For standard metals deposited in Lesker2, Intlvac Sputter or Intlvac Evaporation only. N2 and Ar annealing available. Please contact staff for more information.

Gasonics Aura Asher
gasonics
Gasonics Aura Asher Training Clean, Semiclean
SNF
SNF Cleanroom Paul G Allen L107

Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.

Karl Suss Wafer Bonder
ksbonder
Karl Suss Wafer Bonder Training Clean
SNF
SNF Cleanroom Paul G Allen L107
Lam Research TCP 9400 Poly Etcher
lampoly
Lam Research TCP 9400 Poly Etcher Training Clean, Semiclean
SNF
SNF Cleanroom Paul G Allen L107

Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.

Lesker2 Sputter
lesker2-sputter
Lesker2 Sputter Training Semiclean
SNF
SNF Cleanroom Paul G Allen L107

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

STS Deep RIE Etcher
stsetch
STS Deep RIE Etcher Training Clean, Semiclean
SNF
SNF Cleanroom Paul G Allen L107

4" wafers; pieces should be attached to the carrier wafer for etching; need to use the holder assembly for through wafer etching

Tencor P2 Profilometer
p2
Tencor P2 Profilometer Training Clean, Semiclean
SNF
SNF Cleanroom Paul G Allen L107

Step height measurement range 500 Å to 80 µm

Thermco1
thermco1
Thermco Oxidation Furnaces Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Thermco3
thermco 3
Thermco Oxidation Furnaces Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Wet Bench Clean 1
wbclean-1
Wet Bench Clean 1 and 2 Training Clean
SNF
SNF Cleanroom Paul G Allen L107

No resist allowed. Resist should have been removed at the wbclean_res-piranha.

Wet Bench Clean 2
wbclean-2
Wet Bench Clean 1 and 2 Training Clean
SNF
SNF Cleanroom Paul G Allen L107

No resist allowed. Resist should have been removed at the wbclean_res-piranha

Wet Bench Clean_res-hf
wbclean_res-hf
Wet Bench Clean Piranha/HF/Phosphoric Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Resist as mask allowed

Wet Bench Clean_res-piranha
wbclean_res-piranha
Wet Bench Clean Piranha/HF/Phosphoric Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Resist will be removed

Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Wet Bench Clean Piranha/HF/Phosphoric Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Resist should have been removed

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Equipment name & Badger ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Minimum Resolution Objective Separation Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
Aix-ccs
aix-ccs
Special: See Notes Clean (MOCVD)
0 - 5 μm
400 °C - 1300 °C
,
,
,
4"x1, 2"X3, pieces
AJA2 Evaporator
aja2-evap
Semiclean
0 - 300 nm
,
,
,
,
,
4"x3 or 6"x1 wafers or pieces
AMAT P5000 Etcher
p5000etch
Clean, Clean (Ge), Semiclean
Aw610_l
aw610_l
Pre-Diffusion Clean Clean
21 °C - 1150 °C
,
,
1 wafer
Epi2
epi2
Pre-Diffusion Clean Clean
50 Å - 3 μm
600 °C - 1200 °C
1
Fiji 1
fiji1
Semiclean
1 Å - 50 nm
24 °C - 350 °C
,
,
Gasonics Aura Asher
gasonics
Clean, Semiclean
25
Intlvac Evaporation
Intlvac_evap
Clean, Semiclean
0 - 1 μm
,
,
12 4 inch wafers, 2 6 inch wafers
Karl Suss Wafer Bonder
ksbonder
Clean
Lam Research TCP 9400 Poly Etcher
lampoly
Clean, Semiclean
,
25
Lesker2 Sputter
lesker2-sputter
Semiclean
1 μm
°C - 800 °C
,
,
,
,
,
,
,
,
,
one 4 inch wafer, one 6 inch wafer
STS Deep RIE Etcher
stsetch
Clean, Semiclean
1
Tencor P2 Profilometer
p2
Clean, Semiclean
,
,
,
,
,
,
,
,
1
Teos2
teos2
Pre-Diffusion Clean Clean
50 Å - 5 μm
450 °C - 680 °C
,
,
45
Thermco1
thermco1
Pre-Diffusion Clean Clean
25 Å - 2 μm
700 °C - 1100 °C
,
,
50
Thermco3
thermco 3
Pre-Diffusion Clean Clean
25 Å - 2 μm
700 °C - 1100 °C
50
ThermcoNitride
thermconitride1
Pre-Diffusion Clean Clean
100 Å - 2 μm
785 °C - 850 °C
44
ThermcoPoly1
thermcopoly1
Pre-Diffusion Clean Clean
100 Å - 3 μm
525 °C - 650 °C
,
,
44
TylanBPSG
tylanbpsg
Pre-Diffusion Clean, Standard Metal Clean Clean, Semiclean
100 Å - 3 μm
300 °C - 450 °C
,
,
26
Tylanfga
tylanfga
Standard Metal Clean Semiclean
100 Å - 100 Å
250 °C - 800 °C
50

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