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Equipment name & Badger ID Training Required & Charges Cleanliness Lab Organization Location Notes
Aix-ccs
aix-ccs
Aixtron MOCVD - III-N system training Clean (MOCVD)
SNF
SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

Aix200
aix200
Aixtron MOCVD - III-V system training Flexible
SNF
SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or HF dip.

PlasmaTherm Shuttlelock PECVD System
ccp-dep
PlasmaTherm Shuttlelock PECVD System Training All
SNF
SNF Cleanroom Paul G Allen L107

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

PlasmaTherm Versaline HDP CVD System
hdpcvd
PlasmaTherm Versaline HDP CVD System Training All
SNF
SNF Cleanroom Paul G Allen L107

To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) .  Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

Equipment name & Badger ID Technique Cleaning Required Cleanliness Material Thickness Range Materials Lab Supplied Minimum Resolution Objective Separation Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
Aix-ccs
aix-ccs
Special: See Notes Clean (MOCVD)
0 - 5 μm
400 °C - 1300 °C
,
,
,
4"x1, 2"X3, pieces
Aix200
aix200
Pre-Diffusion Clean, Special: See Notes Flexible
0 - 5 μm
300 °C - 800 °C
,
,
,
4"x1 wafer or 2"x1 wafer or 4 pieces
PlasmaTherm Shuttlelock PECVD System
ccp-dep
Special: See Notes All
100 Å - 4 μm
100 °C - 350 °C
4
PlasmaTherm Versaline HDP CVD System
hdpcvd
Special: See Notes All
500 Å - 4 μm
50 °C - 150 °C
1