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Pre-Diffusion Clean

More information is on the Processing Technique page for Pre-Diffusion Clean.

Following table is a list of all equipment which require a pre-diffusion clean.

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Equipment name & Badger ID Training Required & Chargessort descending Cleanliness Location Notes
Aixtron MOCVD - III-V system
aix200 		MOCVD - III-V Aixtron training Flexible SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or HF dip.
RTA AllWin 610
aw610_l 		AllWin 610 RTA Training Clean SNF Cleanroom Paul G Allen L107
AMAT Centurion Epitaxial System
epi2 		Epitaxial AMAT Centurion Training Clean SNF Cleanroom Paul G Allen L107

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Thermco3 Oxidation Furnace
thermco 3 		Thermco 3 and 4 Oxidation Furnaces Training Clean SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
ThermcoPoly2
thermcopoly2 		Thermco Poly 2 Deposition Furnace Training Flexible SNF Cleanroom Paul G Allen L107

Standard polysilicon deposition at 620C. P and N doping available.
Equipment name & Badger ID Technique Cleaning Required Cleanliness Material Thickness Range Materials Lab Supplied Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
Aixtron MOCVD - III-V system
aix200
Pre-Diffusion Clean Flexible
0.00 - 5.00 μm
300 °C - 800 °C
(Si)
,
(SiO2)
,
(III-V)
,
(GaAs)
 4"x1 wafer or 2"x1 wafer or 4 pieces
AMAT Centurion Epitaxial System
epi2
Pre-Diffusion Clean Clean
50.00 Å - 3.00 μm
600 °C - 1200 °C
1
RTA AllWin 610
aw610_l
Pre-Diffusion Clean Clean
21 °C - 1150 °C
(Si)
,
(SiGe)
,
(SiO2)
 1 wafer
Thermco3 Oxidation Furnace
thermco 3
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
700 °C - 1100 °C
50
ThermcoPoly2
thermcopoly2
Pre-Diffusion Clean Flexible
100.00 Å - 3.00 μm
525 °C - 650 °C
44