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SNF: Chemical Vapor Deposition

mr_equipment

Specifications

Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Objective Separation	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Epi2 epi2	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Amorphous Silicon (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping Deposition > Chemical Vapor Deposition (CVD) > Epi Annealing & Oxidation > Hydrogen (H2) Annealing	Pre-Diffusion Clean	Clean	50 Å - 3 μm	Ge Si SiGe Poly Silicon			600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	4"		1
Fiji 1 fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Semiclean	1 Å - 50 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia			24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Fiji 2 fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible	1 Å - 50 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru SiN SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia			24 °C - 350 °C	Ar H₂ N₂ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Fiji 3 fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible	1 Å - 50 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania			24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (III-V)
MVD mvd	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible	1 Å - 50 nm	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS			24 °C - 150 °C	Ar	Pieces 2" 3" 4" 6" 8"
PlasmaTherm Versaline HDP CVD System hdpcvd	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Amorphous Silicon (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Nitride (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Oxide (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Polysilicon (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD)	Special: See Notes	All	500 Å - 4 μm				50 °C - 150 °C	Ar N₂ O₂ SF₆ SiH₄	Pieces 4"		1
Savannah savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible	1 Å - 50 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia			24 °C - 250 °C	N₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
STS Plasma Enhanced CVD sts	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Nitride (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Oxide (PECVD)		Flexible	100 Å - 5 μm				350 ºC	2% SiH₄ in N₂ N₂ NH₃ O₂	Pieces 4" 6" 8"		Four 4 inch or one 6 inch or one 8 inch
Teos2 teos2	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD)	Pre-Diffusion Clean	Clean	50 Å - 5 μm	SiO₂			450 °C - 680 °C	N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	45
ThermcoLTO thermcoLTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD) Doping		Flexible	100 Å - 3 μm	SiO₂			300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄	Pieces 4" 6"	(Si) , (SiGe) , (SiO2)	26
ThermcoNitride thermconitride1	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Nitride (LPCVD)	Pre-Diffusion Clean	Clean	100 Å - 2 μm	SiN			785 °C - 850 °C	N₂ NH₃ DCS	Pieces 2" 3" 4" 6"	(Si)	44
ThermcoPoly1 thermcopoly1	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Amorphous Silicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping	Pre-Diffusion Clean	Clean	100 Å - 3 μm	Ge Si SiGe Poly Silicon			525 °C - 650 °C	B₂H₆ H₂ N₂ PH₃ SiH₄	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	44
ThermcoPoly2 thermcopoly2	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Amorphous Silicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping	Pre-Diffusion Clean	Flexible	100 Å - 3 μm	Ge Si SiGe Poly Silicon			525 °C - 650 °C	B₂H₆ H₂ N₂ SiGe SiH₄	Pieces 2" 3" 4" 6"		44
TylanBPSG tylanbpsg	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD) Doping	Pre-Diffusion Clean, Standard Metal Clean	Clean, Semiclean	100 Å - 3 μm	SiO₂			300 °C - 450 °C	N₂ O₂ PH₃ SiH₄	3" 4"	(Si) , (SiGe) , (SiO2)	26

Summary

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
Epi2 epi2	AMAT Centurion Epitaxial Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Fiji 1 fiji1	Fiji 1 and 2 Training	Semiclean	SNF	SNF Cleanroom Paul G Allen L107
Fiji 2 fiji2	Fiji 1 and 2 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Fiji 3 fiji3	Fiji 3 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Restricted to non-conductive films only
MVD mvd	MVD Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Reactor located inside glovebox
PlasmaTherm Versaline HDP CVD System hdpcvd	PlasmaTherm Versaline HDP CVD System Training	All	SNF	SNF Cleanroom Paul G Allen L107	To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Savannah savannah	Savannah Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
STS Plasma Enhanced CVD sts	STS Plasma Enhanced CVD Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Teos2 teos2	Teos Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Very conformal.
ThermcoLTO thermcoLTO	Thermco LTO Deposition Furnace Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	limits on material vapor pressure
ThermcoNitride thermconitride1	Thermco Nitride Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Stociometric and low stress (~150mPa) programs available
ThermcoPoly1 thermcopoly1	Thermco Poly Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
ThermcoPoly2 thermcopoly2	Thermco Poly Deposition Furnace Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Standard polysilicon deposition at 620C. P and N doping available.
TylanBPSG tylanbpsg	TylanBPSG Deposition Furnace Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
Epi2 epi2	AMAT Centurion Epitaxial Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Fiji 1 fiji1	Fiji 1 and 2 Training	Semiclean	SNF	SNF Cleanroom Paul G Allen L107
Fiji 2 fiji2	Fiji 1 and 2 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Fiji 3 fiji3	Fiji 3 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Restricted to non-conductive films only
MVD mvd	MVD Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Reactor located inside glovebox
PlasmaTherm Versaline HDP CVD System hdpcvd	PlasmaTherm Versaline HDP CVD System Training	All	SNF	SNF Cleanroom Paul G Allen L107	To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Savannah savannah	Savannah Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
STS Plasma Enhanced CVD sts	STS Plasma Enhanced CVD Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107
Teos2 teos2	Teos Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Very conformal.
ThermcoLTO thermcoLTO	Thermco LTO Deposition Furnace Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	limits on material vapor pressure
ThermcoNitride thermconitride1	Thermco Nitride Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Stociometric and low stress (~150mPa) programs available
ThermcoPoly1 thermcopoly1	Thermco Poly Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
ThermcoPoly2 thermcopoly2	Thermco Poly Deposition Furnace Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Standard polysilicon deposition at 620C. P and N doping available.
TylanBPSG tylanbpsg	TylanBPSG Deposition Furnace Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107

Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Objective Separation	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Epi2 epi2	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Amorphous Silicon (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping Deposition > Chemical Vapor Deposition (CVD) > Epi Annealing & Oxidation > Hydrogen (H2) Annealing	Pre-Diffusion Clean	Clean	50 Å - 3 μm	Ge Si SiGe Poly Silicon			600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	4"		1
Fiji 1 fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Semiclean	1 Å - 50 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia			24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Fiji 2 fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible	1 Å - 50 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru SiN SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia			24 °C - 350 °C	Ar H₂ N₂ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Fiji 3 fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible	1 Å - 50 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania			24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (III-V)
MVD mvd	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible	1 Å - 50 nm	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS			24 °C - 150 °C	Ar	Pieces 2" 3" 4" 6" 8"
PlasmaTherm Versaline HDP CVD System hdpcvd	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Amorphous Silicon (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Nitride (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Oxide (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Polysilicon (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD)	Special: See Notes	All	500 Å - 4 μm				50 °C - 150 °C	Ar N₂ O₂ SF₆ SiH₄	Pieces 4"		1
Savannah savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible	1 Å - 50 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia			24 °C - 250 °C	N₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
STS Plasma Enhanced CVD sts	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Nitride (PECVD) Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD > Deposited Oxide (PECVD)		Flexible	100 Å - 5 μm				350 ºC	2% SiH₄ in N₂ N₂ NH₃ O₂	Pieces 4" 6" 8"		Four 4 inch or one 6 inch or one 8 inch
Teos2 teos2	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD)	Pre-Diffusion Clean	Clean	50 Å - 5 μm	SiO₂			450 °C - 680 °C	N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	45
ThermcoLTO thermcoLTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD) Doping		Flexible	100 Å - 3 μm	SiO₂			300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄	Pieces 4" 6"	(Si) , (SiGe) , (SiO2)	26
ThermcoNitride thermconitride1	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Nitride (LPCVD)	Pre-Diffusion Clean	Clean	100 Å - 2 μm	SiN			785 °C - 850 °C	N₂ NH₃ DCS	Pieces 2" 3" 4" 6"	(Si)	44
ThermcoPoly1 thermcopoly1	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Amorphous Silicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping	Pre-Diffusion Clean	Clean	100 Å - 3 μm	Ge Si SiGe Poly Silicon			525 °C - 650 °C	B₂H₆ H₂ N₂ PH₃ SiH₄	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	44
ThermcoPoly2 thermcopoly2	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Amorphous Silicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping	Pre-Diffusion Clean	Flexible	100 Å - 3 μm	Ge Si SiGe Poly Silicon			525 °C - 650 °C	B₂H₆ H₂ N₂ SiGe SiH₄	Pieces 2" 3" 4" 6"		44
TylanBPSG tylanbpsg	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD) Doping	Pre-Diffusion Clean, Standard Metal Clean	Clean, Semiclean	100 Å - 3 μm	SiO₂			300 °C - 450 °C	N₂ O₂ PH₃ SiH₄	3" 4"	(Si) , (SiGe) , (SiO2)	26

Equipment name & Badger ID	Location	Image	Overview	Materials Lab Supplied	Link to Training
Epi2 epi2	SNF Cleanroom Paul G Allen L107		Epi2 is the the first chamber on the tool and...	Ge Si SiGe Poly Silicon	AMAT Centurion Epitaxial Training
Fiji 1 fiji1	SNF Cleanroom Paul G Allen L107		Fiji1 is a load-locked, plasma-enabled atomic layer deposition (ALD) system....	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia	Fiji 1 and 2 Training
Fiji 2 fiji2	SNF Cleanroom Paul G Allen L107		Fiji2 is a load-locked, plasma-enabled atomic layer deposition (ALD) system....	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru SiN SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia	Fiji 1 and 2 Training
Fiji 3 fiji3	SNF Cleanroom Paul G Allen L107		The Fiji3 ALD system from Cambridge Nanotech/Ultratech is a plasma...	SiO₂ Various Dielectrics Alumina Hafnia Titania	Fiji 3 Training
MVD mvd	SNF Cleanroom Paul G Allen L107		MVD is a molecular vapor deposition (MVD) system. It is...	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS	MVD Training
PlasmaTherm Versaline HDP CVD System hdpcvd	SNF Cleanroom Paul G Allen L107				PlasmaTherm Versaline HDP CVD System Training
Savannah savannah	SNF Cleanroom Paul G Allen L107		Savannah is a thermal atomic layer deposition (ALD) system. It...	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	Savannah Training
STS Plasma Enhanced CVD sts	SNF Cleanroom Paul G Allen L107				STS Plasma Enhanced CVD Training
Teos2 teos2	SNF Cleanroom Paul G Allen L107		Teos2 furnace allows LPCVD deposition of silicon dioxide, using tetraethyl...	SiO₂	Teos Deposition Furnace Training
ThermcoLTO thermcoLTO	SNF Cleanroom Paul G Allen L107		Silicon dioxide (SiO2) is deposited at between 300 and 450C...	SiO₂	Thermco LTO Deposition Furnace Training
ThermcoNitride thermconitride1	SNF Cleanroom Paul G Allen L107		Silicon nitride (or nitride or Si3N4) is deposited at moderately...	SiN	Thermco Nitride Deposition Furnace Training
ThermcoPoly1 thermcopoly1	SNF Cleanroom Paul G Allen L107		Polycrystalline silicon (also called "poly-Si" or "poly") is deposited at...	Ge Si SiGe Poly Silicon	Thermco Poly Deposition Furnace Training
ThermcoPoly2 thermcopoly2	SNF Cleanroom Paul G Allen L107		Same as ThermcoPoly1 but in the "flexible (gold-contaminated)" group. ...	Ge Si SiGe Poly Silicon	Thermco Poly Deposition Furnace Training
TylanBPSG tylanbpsg	SNF Cleanroom Paul G Allen L107		Silicon dioxide (SiO2) is deposited at between 300 and 450C...	SiO₂	TylanBPSG Deposition Furnace Training