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SNF: Annealing, Oxidation and Doping

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Equipment name & Badger ID Training Required & Charges Cleanliness Lab Organization Location Notes
Aw610_l
aw610_l
AllWin 610 RTA Training Clean
SNF
SNF Cleanroom Paul G Allen L107
Aw610_r
aw610_r
AllWin 610 RTA Training Flexible
SNF
SNF Cleanroom Paul G Allen L107
Thermco1
thermco1
Thermco Oxidation Furnaces Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Thermco3
thermco 3
Thermco Oxidation Furnaces Training Clean
SNF
SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Thermco4
thermco4
Thermco Oxidation Furnaces Training Flexible
SNF
SNF Cleanroom Paul G Allen L107

Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.

Tylan9
tylan9
Forming Gas Anneal Furnace Training Flexible
SNF
SNF Cleanroom Paul G Allen L107

Any material that won't vaporize is okay. N2 and Ar annealing available.

Equipment name & Badger ID Technique Cleaning Required Cleanliness Material Thickness Range Materials Lab Supplied Minimum Resolution Objective Separation Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
Aw610_l
aw610_l
Pre-Diffusion Clean Clean
21 °C - 1150 °C
,
,
1 wafer
Aw610_r
aw610_r
Flexible
21 °C - 1150 °C
,
,
Thermco1
thermco1
Pre-Diffusion Clean Clean
25 Å - 2 μm
700 °C - 1100 °C
,
,
50
Thermco3
thermco 3
Pre-Diffusion Clean Clean
25 Å - 2 μm
700 °C - 1100 °C
50
Thermco4
thermco4
Flexible
25 Å - 2 μm
700 °C - 1100 °C
50
Tylan9
tylan9
Flexible
250 °C - 1100 °C
,
,
50
Equipment name & Badger ID Cleanliness Cleaning Required Gases Substrate Size Process Temperature Range Maximum Load (number of wafers) Notes
Epi2
epi2
Clean Pre-Diffusion Clean
600 °C - 1200 °C
1

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

ThermcoLTO
thermcoLTO
Flexible
300 °C - 450 °C
26

limits on material vapor pressure

ThermcoPoly1
thermcopoly1
Clean Pre-Diffusion Clean
525 °C - 650 °C
44

Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.

ThermcoPoly2
thermcopoly2
Flexible Pre-Diffusion Clean
525 °C - 650 °C
44

Standard polysilicon deposition at 620C. P and N doping available.

TylanBPSG
tylanbpsg
Clean, Semiclean Pre-Diffusion Clean, Standard Metal Clean
300 °C - 450 °C
26