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nSiL: Cleanroom

mr_equipment

Specifications

Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Exposure Wavelength	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Aixtron Black Magic graphene CVD furnace aixtron-graphene	Deposition > Chemical Vapor Deposition (CVD) > Graphene CVD Growth	Flexible		C			800 °C - 1100 °C	78% N₂, 21% O₂, ~1% Ar CH₄ H₂	Pieces 2" 3" 4"	(Si) , (Various)	1x4" wafer or Copper/Nickel foil
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Semiclean	0.00 - 300.00 nm	Ag Al Co Cr Ge Hf Nb Pd Pt Si Ta Ti V W Zr Moly					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
First Nano carbon nanotube CVD furnace cvd-nanotube	Deposition > Chemical Vapor Deposition (CVD) > Carbon Nanotube CVD Growth	Flexible		CNT			800 °C - 1100 °C	Ar C₂H₅OH CH₄ H₂ O₂	Pieces 2" 3" 4"	(Si) , (SiO2)	1x4" wafer or multiple pieces
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	All				375 nm			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Semiclean	1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly			°C - 800 °C	Ar N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
Nanospec 3 nanospec3	Characterization > Reflectometry	All							Pieces 2" 3" 4" 6"
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer	All							Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1

Summary

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Aixtron Black Magic graphene CVD furnace aixtron-graphene	CVD graphene furnace Aixtron Black Magic training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
AJA2 Evaporator aja2-evap	Evaporator AJA2	Semiclean	SNF Cleanroom Paul G Allen L107	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
First Nano carbon nanotube CVD furnace cvd-nanotube	cvd-nanotube training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo	Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Sensofar S-neox s-neox	Sensofar S-neox Training	All	SNF Cleanroom Paul G Allen L107	non contact 3D optical profiling
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	All	SNF Cleanroom Paul G Allen L107	Direct Write
Nanospec 3 nanospec3	Nanospec 3 Training	All	SNF Cleanroom Paul G Allen L107
Lesker2 Sputter lesker2-sputter	Sputter Lesker 1&2 Training	Semiclean	SNF Cleanroom Paul G Allen L107	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Aixtron Black Magic graphene CVD furnace aixtron-graphene	CVD graphene furnace Aixtron Black Magic training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
AJA2 Evaporator aja2-evap	Evaporator AJA2	Semiclean	SNF Cleanroom Paul G Allen L107	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
First Nano carbon nanotube CVD furnace cvd-nanotube	cvd-nanotube training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo	Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Sensofar S-neox s-neox	Sensofar S-neox Training	All	SNF Cleanroom Paul G Allen L107	non contact 3D optical profiling
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	All	SNF Cleanroom Paul G Allen L107	Direct Write
Nanospec 3 nanospec3	Nanospec 3 Training	All	SNF Cleanroom Paul G Allen L107
Lesker2 Sputter lesker2-sputter	Sputter Lesker 1&2 Training	Semiclean	SNF Cleanroom Paul G Allen L107	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Exposure Wavelength	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Aixtron Black Magic graphene CVD furnace aixtron-graphene	Deposition > Chemical Vapor Deposition (CVD) > Graphene CVD Growth	Flexible		C			800 °C - 1100 °C	78% N₂, 21% O₂, ~1% Ar CH₄ H₂	Pieces 2" 3" 4"	(Si) , (Various)	1x4" wafer or Copper/Nickel foil
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Semiclean	0.00 - 300.00 nm	Ag Al Co Cr Ge Hf Nb Pd Pt Si Ta Ti V W Zr Moly					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
First Nano carbon nanotube CVD furnace cvd-nanotube	Deposition > Chemical Vapor Deposition (CVD) > Carbon Nanotube CVD Growth	Flexible		CNT			800 °C - 1100 °C	Ar C₂H₅OH CH₄ H₂ O₂	Pieces 2" 3" 4"	(Si) , (SiO2)	1x4" wafer or multiple pieces
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	All				375 nm			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Semiclean	1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly			°C - 800 °C	Ar N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
Nanospec 3 nanospec3	Characterization > Reflectometry	All							Pieces 2" 3" 4" 6"
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer	All							Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1