The MOCVD lab houses two aixtron MOCVD tools for epitaxial growth of compound semiconductors, one for III-V materials like GaAs, the other for III-N materials like GaN. Sample size: pieces, 50mm wafers and 100mm wafers.
Equipment name & Badger ID | Training Required & Charges | Cleanliness | Lab Organization | Location | Notes |
---|---|---|---|---|---|
Aix-ccs aix-ccs |
Aixtron MOCVD - III-N system training | Clean (MOCVD) | SNF MOCVD Paul G Allen 213XA |
N and P doping available. |
|
Aix200 aix200 |
Aixtron MOCVD - III-V system training | Flexible | SNF MOCVD Paul G Allen 213XA |
N and P doping available. |
Equipment name & Badger ID | Technique | Cleaning Required | Cleanliness | Material Thickness Range | Materials Lab Supplied | Minimum Resolution | Objective Separation | Process Temperature Range | Gases | Substrate Size | Substrate Type | Maximum Load |
---|---|---|---|---|---|---|---|---|---|---|---|---|
Aix-ccs aix-ccs |
Special: See Notes | Clean (MOCVD) |
0 -
5 μm
|
|
|
400 °C - 1300 °C
|
, , , |
4"x1, 2"X3, pieces | ||||
Aix200 aix200 |
Pre-Diffusion Clean, Special: See Notes | Flexible |
0 -
5 μm
|
|
|
300 °C - 800 °C
|
, , , |
4"x1 wafer or 2"x1 wafer or 4 pieces |