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MOCVD

The MOCVD lab houses two aixtron MOCVD tools for epitaxial growth of compound semiconductors, one for III-V materials like GaAs, the other for III-N materials like GaN. Sample size: pieces, 50mm wafers and 100mm wafers.

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Equipment name & NEMO ID Training Required & Charges Cleanliness Location Notes
Aixtron MOCVD - III-N system
aix-ccs 		MOCVD - III-N Aixtron training Clean (MOCVD) SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Aixtron MOCVD - III-V system
aix200 		MOCVD - III-V Aixtron training Flexible SNF MOCVD Paul G Allen 213XA

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or HF dip.
Equipment name & NEMO ID Technique Cleaning Required Cleanliness Material Thickness Range Materials Lab Supplied Process Temperature Range Gases Substrate Size Substrate Type Maximum Load
Aixtron MOCVD - III-N system
aix-ccs
Clean (MOCVD)
0.00 - 5.00 μm
400 °C - 1300 °C
(Si)
,
(Al2O3)
,
(SiC)
,
(GaN)
 4"x1, 2"X3, pieces
Aixtron MOCVD - III-V system
aix200
Pre-Diffusion Clean Flexible
0.00 - 5.00 μm
300 °C - 800 °C
(Si)
,
(SiO2)
,
(III-V)
,
(GaAs)
 4"x1 wafer or 2"x1 wafer or 4 pieces