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MOCVD

The MOCVD lab houses two aixtron MOCVD tools for epitaxial growth of compound semiconductors, one for III-V materials like GaAs, the other for III-N materials like GaN. Sample size: pieces, 50mm wafers and 100mm wafers.

mr_equipment

Specifications

Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Objective Separation	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Aix-ccs aix-ccs	Deposition > Deposited III-N Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Special: See Notes	Clean (MOCVD)	0 - 5 μm	AlGaN AlN GaN InAlN InGaAlN InGaN InN			400 °C - 1300 °C	H₂ MO sources N₂ NH₃ SiH₄	Pieces 2" 4"	(Si) , (Al₂O₃) , (SiC) , (GaN)	4"x1, 2"X3, pieces
Aix200 aix200	Deposition > Deposited III-V Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Pre-Diffusion Clean, Special: See Notes	Flexible	0 - 5 μm	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN			300 °C - 800 °C	H₂ MO sources N₂ SiH₄	Pieces 2" 3" 4"	(Si) , (SiO2) , (III-V) , (GaAs)	4"x1 wafer or 2"x1 wafer or 4 pieces

Summary

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
Aix-ccs aix-ccs	Aixtron MOCVD - III-N system training	Clean (MOCVD)	SNF	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Aix200 aix200	Aixtron MOCVD - III-V system training	Flexible	SNF	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
Aix-ccs aix-ccs	Aixtron MOCVD - III-N system training	Clean (MOCVD)	SNF	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Aix200 aix200	Aixtron MOCVD - III-V system training	Flexible	SNF	SNF MOCVD Paul G Allen 213XA	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.

Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Objective Separation	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Aix-ccs aix-ccs	Deposition > Deposited III-N Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Special: See Notes	Clean (MOCVD)	0 - 5 μm	AlGaN AlN GaN InAlN InGaAlN InGaN InN			400 °C - 1300 °C	H₂ MO sources N₂ NH₃ SiH₄	Pieces 2" 4"	(Si) , (Al₂O₃) , (SiC) , (GaN)	4"x1, 2"X3, pieces
Aix200 aix200	Deposition > Deposited III-V Deposition > Chemical Vapor Deposition (CVD) > Metal-Organic (MO) CVD	Pre-Diffusion Clean, Special: See Notes	Flexible	0 - 5 μm	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN			300 °C - 800 °C	H₂ MO sources N₂ SiH₄	Pieces 2" 3" 4"	(Si) , (SiO2) , (III-V) , (GaAs)	4"x1 wafer or 2"x1 wafer or 4 pieces