Process flow for etching Silicon Germanium on contaminated wafers with aluminum in LAMpoly (clean)
PROM Request Title:
Process flow for etching Silicon Germanium on contaminated wafers with aluminum in LAMpoly (clean)
PROM Date:
03/16/2015
PROM Decision:
Request approved for data collection. Data will be reviewed by PROM committee.
Link to PROM Request and supporting documentation:
Equipment List:
Lam Research TCP 9400 Poly Etcher (lampoly)
PROM Request Summary:
Request to modify contamination policy and allow contaminated wafers on clean etcher.