Published on Stanford Nanofabrication Facility (https://snfexfab.stanford.edu)

Home > MOCVD Growth Calibration for GaN LED on Silicon
Areas of Interest: 
III-V, MOCVD InGaN, GaN and AlGaN on silicon doping
Researchers and (Mentors): 
Yusi Chen, Jieyang Jia, (Xiaoxing Xu)
Date: 
June 2015
Project Type: 
E241 [1]
Report: 
MOCVD Growth Calibration for GaN LED on Silicon- Final Report
Presentation: 
MOCVD Growth Calibration for GaN LED on Silicon- Final Presentation
Processing Technique (former Function and Method): 
Metal-Organic (MO) CVD [2]
Materials All: 
III-N materials [3]
Source URL (modified on 10 Aug 2023 - 11:24 am): https://snfexfab.stanford.edu/guide/projects/mocvd-growth-calibration-for-gan-led-on-silicon

Links
[1] https://snfexfab.stanford.edu/snf/project-type/e241
[2] https://snfexfab.stanford.edu/guide/equipment/purpose/deposition/chemical-vapor-deposition-cvd/metal-organic-mo-cvd
[3] https://snfexfab.stanford.edu/guide/materials/iii-n-materials