Published on Stanford Nanofabrication Facility (https://snfexfab.stanford.edu)

Home > MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures
Areas of Interest: 
MOCVD regrowth, patterned in cleanroom and then return to MOCVD tools
Researchers and (Mentors): 
Savannah Bennbrook, Yanni Dahmani, (Xiaoqing Xu)
Imported Presentation: 
click here [1]
Date: 
June 2018
Project Type: 
E241 [2]
Report: 
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures- Final Report
Presentation: 
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures
Runsheet: 
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures Runsheet
Materials All: 
Aluminum Gallium Nitride [3]
Gallium Nitride [4]
Source URL (modified on 8 Sep 2020 - 11:04 pm): https://snfexfab.stanford.edu/snf/projects/mocvd-regrown-ohmic-contacts-to-algangan-heterostructures

Links
[1] https://www.google.com/url?q=https%3A//drive.google.com/a/stanford.edu/file/d/1R6vKAYFGOZ0wlOzTdHe38-BR9GINdyiB/view%3Fusp%3Dsharing&sa=D&ust=1568552691722000&usg=AFQjCNESt9-TId9EUViQag2TcumXTU_O0A
[2] https://snfexfab.stanford.edu/snf/project-type/e241
[3] https://snfexfab.stanford.edu/guide/materials/aluminum-gallium-nitride
[4] https://snfexfab.stanford.edu/nano/material/gan