The Oxford III-V Etcher (Ox-35) is an inductively-coupled plasma (ICP) reactive ion etcher (RIE), designed for etching III-V semiconductors. The Oxford III-V Etcher is currently approved to etch GaAs, InGaAs, InAs, InP, InGaAsP, GaP and Si only.
Metal etching or Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.
Links
[1] https://snfguide.stanford.edu/guide/substrate-size/4-inch-wafer
[2] https://snfguide.stanford.edu/guide/gases/argon
[3] https://snfguide.stanford.edu/guide/gases/boron-trichloride
[4] https://snfguide.stanford.edu/guide/gases/chlorine
[5] https://snfguide.stanford.edu/guide/gases/hydrogen
[6] https://snfguide.stanford.edu/guide/gases/hydrogen-bromide
[7] https://snfguide.stanford.edu/guide/gases/methane
[8] https://snfguide.stanford.edu/guide/gases/nitrogen
[9] https://snfguide.stanford.edu/guide/gases/oxygen
[10] https://snfguide.stanford.edu/guide/gases/sulfur-hexafluoride
[11] https://snfguide.stanford.edu/guide/materials/gallium-arsenide
[12] https://snfguide.stanford.edu/guide/materials/aluminum-indium-phosphide
[13] https://snfguide.stanford.edu/guide/materials/aluminum-gallium-nitride
[14] https://snfguide.stanford.edu/guide/materials/indium-gallium-phosphide
[15] https://snfguide.stanford.edu/guide/materials/indium-antimonide
[16] https://snfguide.stanford.edu/nano/material/gan