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Home > Aix200 (aix200)

Aixtron MOCVD for III-V and dilute nitride semiconductors: InAs, GaAs, AlAs, InP, GaP, AlP, InGaAs, AlGaAs, InGaP, InGaAsN, InPN, et al.

Aix200 is a horizontal metal organic chemical vapor deposition (MOCVD) system from Aixtron. It is a III-V-N system with the model of Aixtron 200/4. It is categorized as contaminated tool in general but divided into a "non-gold period" for the first couple of months after each reactor cleaning, and a "gold contaminated period" for extended experiments requirement in the next couple of months. The system can accommodate pieces, one 2-inch wafer, or one 4-inch wafer.

What the Tool CAN do

  1. Deposit III-V films (single crystal, polycrystal and quasi-amorphous), heterostructures, and nanowires
  2. Dilute nitride of III-V materials
  3. P-type and n-type doping
  4. Tightly controlled thickness from sub-nm to several micron
Cleanliness: 
Flexible
Cleaning Required: 
Pre-Diffusion Clean
Special: See Notes
Lab Facility: 
SNF MOCVD
Training Charges: 
4.00 hours
Primary Trainer: 
Jim Peterson
Primary Maintenance: 
Jim Peterson

Steps to become a tool user

  1. Become a member of SNF.
  1. Read the relevant operating procedures:
    • aix200
  2. Contact the primary trainer:
    Jim Peterson
    for training schedule.
Location: 
SNF MOCVD Paul G Allen 213XA
Badger Area: 
MOCVD
Badger ID: 
aix200
0.0
5.0
μm
Pieces
2 inch wafer
3 inch wafer
4 inch wafer
(H2)
(MO sources)
(N2)
(SiH4)
Maximum Load: 
4"x1 wafer or 2"x1 wafer or 4 pieces
Notes: 

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For III-V clean: HCl or HF dip.

Aluminum Arsenide (AlAs)
Aluminum Gallium Arsenide (AlGaAs)
Gallium Arsenide (GaAs)
Gallium Phosphide (GaP)
Gallium Phosphorous Nitride (GaPN)
III-V materials (III-V materials)
Indium Arsenide (InAs)
Indium Gallium Arsenide (InGaAs)
Indium Gallium Arsenide Nitrogen (InGaAsN)
Silicon
Quartz
III-V
Gallium Arsenide
aix-200 MOCVD

Source URL (modified on 6 Oct 2021 - 3:20 pm): https://snfexfab.stanford.edu/guide/equipment/aix200-aix200