Aix-ccs (aix-ccs)

Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN, AlGaN, InGaAlN. Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system from Aixtron. It is a III-N system with a vertical closed coupled showerhead reactor, installed with a 1 by 4-inch susceptor and a 3 by 2-inch susceptor. It is categorized as contaminated tool in general but is a clean MOCVD so only accepts clean substrates. The system has been well calibrated for 4-inch wafer, while pieces and 2-inch wafer are available too.

Cleanliness:

Clean (MOCVD)

Cleaning Required:

Special: See Notes

Lab Facility:

SNF MOCVD

Training Charges:

4.00 hours

Primary Trainer:

Jim Peterson

Primary Maintenance:

Jim Peterson

Steps to become a tool user

Become a member of SNF.

Read the relevant operating procedures:
aix-ccs
Contact the primary trainer:

Jim Peterson

for training schedule.

Location:

SNF MOCVD Paul G Allen 213XA

Badger Area:

MOCVD

Badger ID:

aix-ccs

0.0

5.0

μm

Pieces

2 inch wafer

4 inch wafer

(NH₃)

(H₂)

(MO sources)

(N₂)

(SiH₄)

Maximum Load:

4"x1, 2"X3, pieces

Notes:

N and P doping available.
For Si clean: SC1, SC2, HF dip.
For Sapphire clean: SC1, SC2.
For GaN template on Si or Sapphire: Piranha, SC1, SC2.

Aluminum Gallium Nitride (AlGaN)

Aluminum Nitride (AlN)

Gallium Nitride (GaN)

Indium Aluminum Nitride (InAlN)

Indium Gallium Aluminum Nitride (InGaAlN)

Indium Gallium Nitride (InGaN)

Indium Nitride (InN)

Silicon

Sapphire

Silicon Carbide

Gallium Nitride