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Silicon Germanium

Chemical Formula:

SiGe

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
Sensofar S-neox s-neox	Sensofar S-neox Training	All	SNF	SNF Cleanroom Paul G Allen L107	non contact 3D optical profiling
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF	SNF Cleanroom Paul G Allen L107	Pieces need a carrier wafer; Isotropic Etching
SVG Develop Track 1 svgdev	SVG Resist Develop tracks 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Resist Coat Track 1 svgcoat	SVG Resist Coat Tracks 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	Automatic Resist spinning and bake
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	All	SNF	SNF Cleanroom Paul G Allen L107	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Teos2 teos2	Teos Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Very conformal.
Thermco1 thermco1	Thermco Oxidation Furnaces Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Dry and wet oxidation. Use calculator to determine growth rate. N2 annealing available.
ThermcoLTO thermcoLTO	Thermco LTO Deposition Furnace Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	limits on material vapor pressure
ThermcoPoly1 thermcopoly1	Thermco Poly Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
Tylan9 tylan9	Forming Gas Anneal Furnace Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Any material that won't vaporize is okay. N2 and Ar annealing available.
TylanBPSG tylanbpsg	TylanBPSG Deposition Furnace Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107
Wet Bench Clean 1 wbclean-1	Wet Bench Clean 1 and 2 Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha.
Wet Bench Clean 2 wbclean-2	Wet Bench Clean 1 and 2 Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Resist should have been removed
Wet Bench Clean_res-hf wbclean_res-hf	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Resist as mask allowed
Wet Bench Clean_res-piranha wbclean_res-piranha	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Resist will be removed
Wet Bench CMOS Metal (wbclean3) wbclean3	Wet Bench CMOS Metal (wbclean3) Training	Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Al, Ti, or W wet etching or oxide etching
Wet Bench Decontamination wbdecon	Wet Bench Decontamination Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	KOH or wafersaw or post-cmp decontamination

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Resist	Developer	Objective Separation	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer		All											Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
SPTS uetch vapor etch uetch	Etching > Vapor Etching		All	SiO₂									C₂H₅OH HF vapor	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
SVG Develop Track 1 svgdev	Optical Photolithography > Resist Develop > Resist Develop (automatic)		All						MF-26A developer					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Develop Track 2 svgdev2	Optical Photolithography > Resist Develop > Resist Develop (automatic)		All						MF-26A developer					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 1 svgcoat	Optical Photolithography > Resist coat > Resist Coat (automatic)		All					Shipley 3612 resist SPR220-3 resist SPR220-7						4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 2 svgcoat2	Optical Photolithography > Resist coat > Resist Coat (automatic)		All					AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist						4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean											Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (GaAs) , (GaN) , (Ge) , (SiO₂) , (III-V) , (Al₂O₃)	1
Teos2 teos2	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD)	Pre-Diffusion Clean	Clean		50 Å - 5 μm	SiO₂					450 °C - 680 °C		N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	45
Thermco1 thermco1	Annealing & Oxidation > Furnaces > Furnace Annealing Annealing & Oxidation > Furnaces > Oxide Growth	Pre-Diffusion Clean	Clean		25 Å - 2 μm	SiO₂					700 °C - 1100 °C		H₂ N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	50
ThermcoLTO thermcoLTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD) Doping		Flexible		100 Å - 3 μm	SiO₂					300 °C - 450 °C		B₂H₆ N₂ O₂ PH₃ SiH₄	Pieces 4" 6"	(Si) , (SiGe) , (SiO2)	26
ThermcoPoly1 thermcopoly1	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Amorphous Silicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping	Pre-Diffusion Clean	Clean		100 Å - 3 μm	Ge Si SiGe Poly Silicon					525 °C - 650 °C		B₂H₆ H₂ N₂ PH₃ SiH₄	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	44
Tylan9 tylan9	Annealing & Oxidation > Furnaces > Furnace Annealing		Flexible								250 °C - 1100 °C		10% H₂ in N₂ Ar H₂ N₂ O₂	Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2)	50
TylanBPSG tylanbpsg	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD) Doping	Pre-Diffusion Clean, Standard Metal Clean	Clean, Semiclean		100 Å - 3 μm	SiO₂					300 °C - 450 °C		N₂ O₂ PH₃ SiH₄	3" 4"	(Si) , (SiGe) , (SiO2)	26
Wet Bench Clean 1 wbclean-1	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean		Clean									50:1 HF SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean 2 wbclean-2	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean		Clean									50:1 HF 6:1 BOE SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Etching > Wet Etching > Silicon Nitride Wet Etching		Clean	SiN								H₃PO₄		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-hf wbclean_res-hf	Etching > Wet Etching > Silicon Oxide Wet Etching		Clean	SiO								20:1 BOE 50:1 HF 6:1 BOE		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-piranha wbclean_res-piranha	Cleaning > Piranha Cleaning Cleaning > Resist Removal > Wet Resist Removal		Clean									9:1 Piranha		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench CMOS Metal (wbclean3) wbclean3	Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching		Semiclean	Al Ti W								20:1 BOE 50:1 HF 6:1 BOE Al-Etch Ti-Etch W-etch		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25 wafers
Wet Bench Decontamination wbdecon	Cleaning > Decontamination		Clean									SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)

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