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Silicon Germanium

Chemical Formula:

SiGe

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Savannah ALD savannah	ALD Savannah Training	Flexible	SNF Cleanroom Paul G Allen L107
SEM -Zeiss Merlin sem-merlin	SEM-Merlin Training	All	SNF Exfab Paul G Allen 104 Stinson
Sensofar S-neox s-neox	Sensofar S-neox Training	All	SNF Cleanroom Paul G Allen L107	non contact 3D optical profiling
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF Cleanroom Paul G Allen L107	Pieces need a carrier wafer; Isotropic Etching
SVG Develop Track 1 svgdev	SVG Resist Develop tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Develop Track 2 svgdev2	SVG Resist Develop tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic development.
SVG Resist Coat Track 1 svgcoat	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic Resist spinning and bake
SVG Resist Coat Track 2 svgcoat2	SVG Resist Coat Tracks 1 and 2 Training	All	SNF Cleanroom Paul G Allen L107	Automatic HMDS, Resist spinning, and Bake. AZ5214IR Image Reversal.
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Tylan9 Forming Gas Anneal Furnace tylan9	Forming Gas Anneal Furnace Training	Flexible	SNF Cleanroom Paul G Allen L107	Any material that won't vaporize is okay. N2 and Ar annealing available.
Tystar Bank 1 Tube 1 B1T1 Flexible Oxide	Tystar Atmospheric Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide Anneal	Tystar Atmospheric Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 5 B2T5 Clean Oxide Anneal	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Wet Bench Clean 1 wbclean-1	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha.
Wet Bench Clean 2 wbclean-2	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist should have been removed
Wet Bench Clean_res-hf wbclean_res-hf	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist as mask allowed
Wet Bench Clean_res-piranha wbclean_res-piranha	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist will be removed

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Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Material Thickness Range	Materials Lab Supplied	Resist	Developer	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Substrate Size	Substrate Type	Maximum Load
Savannah ALD savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible		1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia			24 °C - 250 °C		N₂		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
SEM -Zeiss Merlin sem-merlin	Characterization > Surface Analysis > Microscopy		All		0.00 mm - 35.00 mm							6 in wafer	Pieces 2" 3" 4" 6" Disks	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb)
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer		All										Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
SPTS uetch vapor etch uetch	Etching > Vapor Etching		All	SiO₂							C₂H₅OH HF vapor		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
SVG Develop Track 1 svgdev	Photolithography > Resist Develop > Resist Develop (automatic)		All					MF-26A developer					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Develop Track 2 svgdev2	Photolithography > Resist Develop > Resist Develop (automatic)		All					MF-26A developer					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 1 svgcoat	Photolithography > Resist coat > Resist Coat (automatic)		All				Shipley 3612 resist SPR220-3 resist SPR220-7						4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 2 svgcoat2	Photolithography > Resist coat > Resist Coat (automatic)		All				AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist						4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean										Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Tylan9 Forming Gas Anneal Furnace tylan9	Annealing & Oxidation > Annealing (furnace)		Flexible			SiO₂			250 °C - 1100 °C		10% H₂ in N₂ Ar H₂ N₂ O₂		Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2)	50
Tystar Bank 1 Tube 1 B1T1 Flexible Oxide	Annealing & Oxidation > Oxide Growth (furnace)		Flexible		25.00 Å - 2.00 μm				400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide Anneal	Annealing & Oxidation > Annealing (furnace) Annealing & Oxidation > Oxide Growth (furnace)		Flexible		25.00 Å - 2.00 μm				400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 5 B2T5 Clean Oxide Anneal	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean		25.00 Å - 2.00 μm				400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean		25.00 Å - 2.00 μm				400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean		25.00 Å - 2.00 μm				400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂		4" 6"	(Si) , (SiGe) , (SiO2)	100
Wet Bench Clean 1 wbclean-1	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean		Clean							50:1 HF SC1 SC2			3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean 2 wbclean-2	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean		Clean							50:1 HF 6:1 BOE SC1 SC2			3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Etching > Wet Etching > Silicon Nitride Wet Etching		Clean	Si3N4						H₃PO₄			3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-hf wbclean_res-hf	Etching > Wet Etching > Silicon Oxide Wet Etching		Clean	SiO₂						20:1 BOE 50:1 HF 6:1 BOE			3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-piranha wbclean_res-piranha	Cleaning > Piranha Cleaning Cleaning > Resist Removal > Wet Resist Removal		Clean							9:1 Piranha			3" 4" 6"	(Si) , (SiGe) , (SiO2)

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