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Quartz

Chemical Formula:

SiO2

Equipment name & Badger ID	Training Required & Charges	Cleanliness	Lab Organization	Location	Notes
Wet Bench Clean_res-hf wbclean_res-hf	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Resist as mask allowed
Wet Bench Clean_res-piranha wbclean_res-piranha	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Resist will be removed
Wet Bench CMOS Metal (wbclean3) wbclean3	Wet Bench CMOS Metal (wbclean3) Training	Semiclean	SNF	SNF Cleanroom Paul G Allen L107	Al, Ti, or W wet etching or oxide etching
Wet Bench Flexcorr 1 wbflexcorr-1	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
Wet Bench Flexcorr 2 wbflexcorr-2	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials. 3 hot pots available. GaAs allowed in personal labware only
Wet Bench Flexcorr 3 wbflexcorr-3	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Manual wet etching of non-standard materials. Hot Plate available. GaAs not allowed.
Wet Bench Flexible Solvents 1 wbflexsolv-1	Wet Bench Flexible Solvents 1 and 2 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning, two ultrasonic baths.
Wet Bench Flexible Solvents 2 wbflexsolv-2	Wet Bench Flexible Solvents 1 and 2 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning, hot plate
Wet Bench Flexible Solvents wbflexsolv	Wet Bench Flexible Solvents 1 and 2 Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Manual solvent cleaning of substrates or resist removal.
Wet Bench Miscellaneous wbmiscres	Wet Bench Miscellaneous Photoresist Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Manual development of resist in beakers and Headway (manual resist spinner). SNF approved developers (acid or base). No solvents!
Wet Bench Resist Strip wbresstrip-1	Wet Bench Resist Strip	Clean (Ge), Semiclean, Flexible	SNF	SNF Cleanroom Paul G Allen L107	Wet Resist Removal: SRS-100 or PRS1000
Xactix Xenon Difluoride Etcher xactix	Xactix Xenon Difluoride Etcher Training	All	SNF	SNF Cleanroom Paul G Allen L107	Isotropic Si etching; can be used for backside Si removal on small pieces
HMDS Vapor Prime Oven, YES yes	YES Prime Oven Training	All	SNF	SNF Cleanroom Paul G Allen L107	Two programs: Singe and HMDS prime or Singe only. No Resist allowed!
ThermcoPoly1 thermcopoly1	Thermco Poly Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
ThermcoLTO thermcoLTO	Thermco LTO Deposition Furnace Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	limits on material vapor pressure
Teos2 teos2	Teos Deposition Furnace Training	Clean	SNF	SNF Cleanroom Paul G Allen L107	Very conformal.
TylanBPSG tylanbpsg	TylanBPSG Deposition Furnace Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107
Innotec Evaporator Innotec	Innotec Evaporator Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107	Precious metals limit is <200nm
Intlvac Evaporation Intlvac_evap	Intlvac Evaporation Training	Clean, Semiclean	SNF	SNF Cleanroom Paul G Allen L107
EV Group Wafer Bonder evbond	EV Group Wafer Bonder Training	Flexible	SNF	SNF Cleanroom Paul G Allen L107

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Equipment name & Badger ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Resist	Developer	Objective Separation	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist	Si based materials dimethylpolysiloxane Si SiN SiO₂ SiON Various polymers PI Poly Silicon							20 ºC		CF₄ O₂ SF₆	Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1 Å - 50 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia					24 °C - 250 °C		N₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer		All												Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
SPTS uetch vapor etch uetch	Etching > Vapor Etching		All	SiO₂										C₂H₅OH HF vapor	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
SVG Develop Track 1 svgdev	Optical Photolithography > Resist Develop > Resist Develop (automatic)		All							MF-26A developer					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Develop Track 2 svgdev2	Optical Photolithography > Resist Develop > Resist Develop (automatic)		All							MF-26A developer					4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 1 svgcoat	Optical Photolithography > Resist coat > Resist Coat (automatic)		All						Shipley 3612 resist SPR220-3 resist SPR220-7						4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
SVG Resist Coat Track 2 svgcoat2	Optical Photolithography > Resist coat > Resist Coat (automatic)		All						AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist						4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	25 4 inch wafers
Technics Asher technics	Etching > Dry Etching Cleaning > Resist Removal > Dry Resist Removal		Flexible	Resist	dimethylpolysiloxane poly(p-xylylene) PI									O₂	Pieces 4" 6" 8"	(Si) , (SiO2) , (SiO₂)	Four 4" wafers to pieces, one 6" or 8" wafer
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean												Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (GaAs) , (GaN) , (Ge) , (SiO₂) , (III-V) , (Al₂O₃)	1
Teos2 teos2	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD)	Pre-Diffusion Clean	Clean			50 Å - 5 μm	SiO₂					450 °C - 680 °C		N₂ O₂ Si(OC₂H₅)₄	4" 6"	(Si) , (SiGe) , (SiO2)	45
Thermco1 thermco1	Annealing & Oxidation > Furnaces > Furnace Annealing Annealing & Oxidation > Furnaces > Oxide Growth	Pre-Diffusion Clean	Clean			25 Å - 2 μm	SiO₂					700 °C - 1100 °C		H₂ N₂ O₂	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	50
ThermcoLTO thermcoLTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD) Doping		Flexible			100 Å - 3 μm	SiO₂					300 °C - 450 °C		B₂H₆ N₂ O₂ PH₃ SiH₄	Pieces 4" 6"	(Si) , (SiGe) , (SiO2)	26
ThermcoPoly1 thermcopoly1	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Amorphous Silicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Germanium Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Polysilicon (LPCVD) Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited SiGe Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Single Crystal Silicon (LPCVD) Doping	Pre-Diffusion Clean	Clean			100 Å - 3 μm	Ge Si SiGe Poly Silicon					525 °C - 650 °C		B₂H₆ H₂ N₂ PH₃ SiH₄	Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	44
Tylan9 tylan9	Annealing & Oxidation > Furnaces > Furnace Annealing		Flexible									250 °C - 1100 °C		10% H₂ in N₂ Ar H₂ N₂ O₂	Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2)	50
TylanBPSG tylanbpsg	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD > Deposited Oxide (LPCVD) Doping	Pre-Diffusion Clean, Standard Metal Clean	Clean, Semiclean			100 Å - 3 μm	SiO₂					300 °C - 450 °C		N₂ O₂ PH₃ SiH₄	3" 4"	(Si) , (SiGe) , (SiO2)	26
Wet Bench Clean 1 wbclean-1	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean		Clean										50:1 HF SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean 2 wbclean-2	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean		Clean										50:1 HF 6:1 BOE SC1 SC2		3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Etching > Wet Etching > Silicon Nitride Wet Etching		Clean	SiN									H₃PO₄		3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-hf wbclean_res-hf	Etching > Wet Etching > Silicon Oxide Wet Etching		Clean	SiO									20:1 BOE 50:1 HF 6:1 BOE		3" 4" 6"	(Si) , (SiGe) , (SiO2)

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