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Chemical Formula:

Various

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Fiji 2 ALD fiji2	ALD Fiji 1 and 2 Training	Flexible	SNF Cleanroom Paul G Allen L107
Savannah ALD savannah	ALD Savannah Training	Flexible	SNF Cleanroom Paul G Allen L107
Aixtron Black Magic graphene CVD furnace aixtron-graphene	CVD graphene furnace Aixtron Black Magic training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
AJA2 Evaporator aja2-evap	Evaporator AJA2	Semiclean	SNF Cleanroom Paul G Allen L107	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Woollam woollam	Woollam Training	All	SNF Cleanroom Paul G Allen L107
micromanipulator6000 IV-CV probe station micromanipulator6000	micromanipulator6000 IV-CV probe station Training	All	SNF Exfab Paul G Allen 151 Ocean
AJA Evaporator aja-evap	Evaporator AJA training	Flexible	SNF Exfab Paul G Allen 155A Venice	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Parylene Coater Training	Flexible	SNF Exfab Paul G Allen 155 Mavericks
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	LEI1500 Contactless Sheet Resistance Mapping Training	All	SNF Exfab Paul G Allen 151 Ocean
Lakeshore Hall Measurement System LakeshoreHall	Lakeshore Hall Measurement System training	All	SNF Exfab Paul G Allen 151 Ocean
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF Cleanroom Paul G Allen L107

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Process Temperature Range	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Aixtron Black Magic graphene CVD furnace aixtron-graphene	Deposition > Chemical Vapor Deposition (CVD) > Graphene CVD Growth	Flexible				C	800 °C - 1100 °C	78% N₂, 21% O₂, ~1% Ar CH₄ H₂			Pieces 2" 3" 4"	(Si) , (Various)	1x4" wafer or Copper/Nickel foil
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible			0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	4"x3 or 6"x1 wafers or pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Semiclean			0.00 - 300.00 nm	Ag Al Co Cr Ge Hf Nb Pd Pt Si Ta Ti V W Zr Moly					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia	24 °C - 350 °C	Ar H₂ N₂ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Hall measurement Characterization > Sheet Resistance Measurement	All			100.00 μm - 1000.00 μm		-258 °C - 1000 °C		8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)	1 piece
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	All							8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization	All									Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition	Flexible				poly(p-xylylene)					Pieces 2" 3" 4" 6" 8" Cones Disks Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI			20 ºC	CF₄ O₂ SF₆			Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD	Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	24 °C - 250 °C	N₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Woollam woollam	Characterization > Ellipsometry	All									Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	1