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HgCdTe/HgTe/HgCdTe quantum wells on GaAs substrate

PROM Request Title: 
HgCdTe/HgTe/HgCdTe quantum wells on GaAs substrate
PROM Request Summary: 
Request to do low temp Al2O3 deposition on new materials in Savannah. Pieces will be on carrier wafers.
PROM Date: 
08/17/2015
PROM Decision: 
Request approved. Chamber to be coated with 200 cycles of Al2O3 at 200C after deposition.
Equipment List: