TylanBPSG (tylanbpsg)
Overview
Tylan Bank one containing TylanBPSG furnace.
Stanford staff
As of 8/1/23, this furnace is shut down and will be permanently removed from the cleanroom. It will be replaced by a new Tystar furnace in March 2024. Find the current project schedule and more information here.
Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass). The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. The oxide deposition rate is mostly dependent on the temperature and is ~ 175A/min at 400C for 4 inch wafers (~200A/min for 3 inch wafers).
Processing Technique(s)
Capabilities and Specifications
Cleaning Required:
Pre-Diffusion Clean
Standard Metal Clean
Lab Supplied Materials
Material Thickness Range: 100.0 Å - 3.0 μm
Process Temperature Range:
300 °C - 450 °C
Gases
Substrate Type
Substrate Sizes
Maximum Load:
26
Lab Organization, Location, and Badger Information
Lab Organization:
Location:
Badger Area:
SNF: Chemical Vapor Deposition
Badger ID:
tylanbpsg
