Thermco Bank one containing ThermcoPoly.
Polycrystalline silicon (also called "poly-Si" or "poly") is deposited at a low pressure (~500 mtorr) using silane (SiH4). The tube has a sloping temperature profile. Deposition temperature is ~620C for polysilicon and ~520C for amorphous silicon. This furnace can handle wafers up to 6 inch and is plumbed with Ge, PH3 and B2H6.
Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
Equipment name & Badger ID | Cleanliness | Cleaning Required | Gases | Substrate Size | Process Temperature Range | Maximum Load (number of wafers) | Notes |
---|---|---|---|---|---|---|---|
Epi2 epi2 |
Clean | Pre-Diffusion Clean |
600 °C - 1200 °C
|
1 |
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
||
ThermcoLTO thermcoLTO |
Flexible |
300 °C - 450 °C
|
26 |
limits on material vapor pressure |
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ThermcoPoly1 thermcopoly1 |
Clean | Pre-Diffusion Clean |
525 °C - 650 °C
|
44 |
Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available. |
||
ThermcoPoly2 thermcopoly2 |
Flexible | Pre-Diffusion Clean |
525 °C - 650 °C
|
44 |
Standard polysilicon deposition at 620C. P and N doping available. |
||
TylanBPSG tylanbpsg |
Clean, Semiclean | Pre-Diffusion Clean, Standard Metal Clean |
300 °C - 450 °C
|
26 |