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ThermcoPoly1 (thermcopoly1)

Overview

Thermco Bank one containing ThermcoPoly.

SNF staff

Polycrystalline silicon (also called "poly-Si" or "poly") is deposited at a low pressure (~500 mtorr) using silane (SiH4). The tube has a sloping temperature profile. Deposition temperature is ~620C for polysilicon and ~520C for amorphous silicon. This furnace can handle wafers up to 6 inch and is plumbed with Ge, PH3 and B2H6.

Cleanliness: 
Clean

Processing Technique(s)

Capabilities and Specifications

Cleaning Required: 
Pre-Diffusion Clean
Material Thickness Range: 100.0 Å - 3.0 μm
Process Temperature Range: 
525 °C - 650 °C
Maximum Load: 
44
Notes: 

Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.

Lab Organization, Location, and Badger Information

Lab Organization: 
Stanford Nanofabrication Facility Cleanroom (SNF Cleanroom)
Location: 
SNF Cleanroom Paul G Allen L107
Badger Area: 
SNF: Chemical Vapor Deposition
Badger ID: 
thermcopoly1

Training and Maintenance

Lab Facility: 
SNF Cleanroom
Training Charges: 
3.00 hours
Primary Trainer: 
Maurice Stevens
Primary Maintenance: 
Saeed Nejad

Steps to become a tool user

  1. Become a member of SNF.
  1. Read the relevant operating procedures:
  2. Shadowing: Contact a qualified user of the tool to arrange to ‘shadow’. It would be best to find someone who has used the system often. If you don’t know of anyone, you may check reservations or history to find a qualified user. You may also contact the Discussion Lists. We recommend that you be with the lab member for the full time while operating the tool and ask lots of questions during the shadowing. You may have to shadow a qualified user more than one time to be comfortable with the tool.
    Print the SNF Training Shadowing Form on clean room paper.
  3. Contact the primary trainer:
    .

Operating Instructions

ThermcoPoly1
Equipment name & Badger ID Cleanliness Cleaning Required Gases Substrate Size Process Temperature Range Maximum Load (number of wafers) Notes
Epi2
epi2 		Clean Pre-Diffusion Clean
600 °C - 1200 °C
1

N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
ThermcoLTO
thermcoLTO 		Flexible
300 °C - 450 °C
26

limits on material vapor pressure
ThermcoPoly1
thermcopoly1 		Clean Pre-Diffusion Clean
525 °C - 650 °C
44

Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
ThermcoPoly2
thermcopoly2 		Flexible Pre-Diffusion Clean
525 °C - 650 °C
44

Standard polysilicon deposition at 620C. P and N doping available.
TylanBPSG
tylanbpsg 		Clean, Semiclean Pre-Diffusion Clean, Standard Metal Clean
300 °C - 450 °C
26