The bottom furnace in Thermco bank2 is the ThermcoLTO Furnace.
Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass). The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. Six inch.
limits on material vapor pressure
Equipment name & Badger ID | Cleanliness | Cleaning Required | Gases | Substrate Size | Process Temperature Range | Maximum Load (number of wafers) | Notes |
---|---|---|---|---|---|---|---|
Epi2 epi2 |
Clean | Pre-Diffusion Clean |
600 °C - 1200 °C
|
1 |
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
||
ThermcoLTO thermcoLTO |
Flexible |
300 °C - 450 °C
|
26 |
limits on material vapor pressure |
|||
ThermcoPoly1 thermcopoly1 |
Clean | Pre-Diffusion Clean |
525 °C - 650 °C
|
44 |
Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available. |
||
ThermcoPoly2 thermcopoly2 |
Flexible | Pre-Diffusion Clean |
525 °C - 650 °C
|
44 |
Standard polysilicon deposition at 620C. P and N doping available. |
||
TylanBPSG tylanbpsg |
Clean, Semiclean | Pre-Diffusion Clean, Standard Metal Clean |
300 °C - 450 °C
|
26 |