Thermco Nitride Deposition Furnace LPCVD (thermconitride1)
Overview
Thermco Bank one containing ThermcoNitride.
Silicon nitride (or nitride or Si3N4) is deposited at moderately high temperatures (~800C) and low pressure (~250 mtorr), using dichlorosilane (SiCl2H2) and ammonia (NH3). This furnace handles wafer up to 6 inch.
Cleanliness:
Processing Technique(s)
Capabilities and Specifications
Cleaning Required:
Pre-Diffusion Clean
Lab Supplied Materials
Material Thickness Range: 100.0 Å - 2.0 μm
Process Temperature Range:
785 °C - 850 °C
Gases
Substrate Type
Substrate Sizes
Maximum Load:
44
Notes:
Stociometric and low stress (~150mPa) programs available
Lab Organization, Location, and Badger Information
Lab Organization:
Location:
Badger Area:
SNF: Chemical Vapor Deposition
Badger ID:
thermconitride1
Training and Maintenance
Lab Facility:
Training Charges:
3.00 hours
Primary Trainer:
Primary Maintenance:
Steps to become a tool user
-
Become a member of SNF.
- Study the relevant operating procedures:
- Shadowing is required. Contact a qualified lab member of the tool to arrange to ‘shadow’. It would be best to find someone who has used the system often. If you don’t know of anyone, you may check reservations or history to find a qualified user. We recommend that you be with the lab member for the full time while operating the tool and ask lots of questions during the shadowing. You may have to shadow a qualified user more than one time to be comfortable with the tool. Please follow the instructions on this form: Shadowing at SNF
- Contact the primary trainer: Alex Denton
