STS Deep RIE Etcher (stsetch)
This is a ICP (Inductive Charged Plasma) Deep Reactive Ion etcher from Surface Technology Systems. The platform is single-chamber, manual loadlock system. The etch process is based on the patented Laermer and Schlip process, commonly referred to as the Bosch Process. The etch process alternates between the passivating C4F8 plasma and the silicon etching SF6 plasma.
Capabilities and Specifications
Primary Materials Etched
Primary Materials Etched:
4" wafers; pieces should be attached to the carrier wafer for etching; need to use the holder assembly for through wafer etching
Lab Organization, Location, and Badger Information
Training and Maintenance
Steps to become a tool user
Optional: For background on "Plasma Etching" and "Choosing an Etcher", Online Course
for general information about the online training.
Go to Go to Online Nano Course Login
to log in directly to the course.Go to "nano@stanford" and then to the "Dry Etching" Section for the three videos on plasma etching principles and go to the "Choosing a Dry Etching Process" section for guidelines for choosing the right equipment.
Shadowing is required. Contact a qualified lab member of the tool to arrange to ‘shadow’. It would be best to find someone who has used the system often. If you don’t know of anyone, you may check reservations or history to find a qualified user. We recommend that you be with the lab member for the full time while operating the tool and ask lots of questions during the shadowing. You may have to shadow a qualified user more than one time to be comfortable with the tool. Please follow the instructions on this form: Shadowing at SNF