Deposition

Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & Badger ID	Teaser Blurb	Cleanliness	Location
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	The Plasma-Therm Shuttlelock PECVD (CCP-Dep) system is used for depositing low-stress silicon nitride, silicon dioxide, amorphous and silicon carbide, and silicon oxynitride layers on 4 inch wafers.	All	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) CVD	PlasmaTherm Versaline HDP CVD System hdpcvd	High Density Plasma Enhanced Chemical Vapor Deposition (HD PECVD) system is used to deposit silicon dioxide, silicon nitride and amorphous silicon.	All	SNF Cleanroom Paul G Allen L107
Thermal ALD	Savannah ALD savannah		Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass. The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. (Six inch furnace)	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	In the "flexible cleanliness" group.	Flexible	SNF Cleanroom Paul G Allen L107
Patterning, Ink	Voltera voltera		Flexible	SNF Exfab Paul G Allen 151 Ocean

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Detail Tab

Processing Technique	Equipment name & Badger ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	All	Si Si3N4 SiC SiO₂ SiON	100.00 Å - 4.00 μm	Pieces 4"	4	100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous		To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Plasma Enhanced (PE) CVD	PlasmaTherm Versaline HDP CVD System hdpcvd	All	Si Si3N4 SiC SiO₂ SiON	500.00 Å - 4.00 μm	Pieces 4"	1	50 °C - 150 °C	Ar N₂ O₂ SF₆ SiH₄		To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Thermal ALD	Savannah ALD savannah	Flexible	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 250 °C	N₂
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Flexible	SiO₂	100.00 Å - 3.00 μm	Pieces 4" 6"	26	300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄		limits on material vapor pressure
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Flexible	Ge Si SiGe	100.00 Å - 3.00 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ SiGe SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available.
Patterning, Ink	Voltera voltera	Flexible	Various conductive inks Various custom inks

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Deposition

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