Deposition

Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & Badger ID	Teaser Blurb	Cleanliness	Location
Ink	Optomec Printer optomec-printer		Flexible	SNF Exfab Paul G Allen 155A Venice
Plasma Enhanced (PE) ALD	Fiji 1 ALD fiji1	Fiji1 is a load-locked, plasma-enabled atomic layer deposition (ALD) system.	Semiclean	SNF Cleanroom Paul G Allen L107
Sputtering	Hummer V Sputter Coater hummer		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Evaporation	Intlvac Evaporator Intlvac_evap		Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Ink	Fujifilm Dimatix Ink Jet Printer nanoinkjet		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Graphene CVD Growth	Aixtron Black Magic graphene CVD furnace aixtron-graphene		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Patterning, Ink	Voltera voltera		Flexible	SNF Exfab Paul G Allen 151 Ocean
Plasma Enhanced (PE) ALD	Fiji 2 ALD fiji2	Fiji2 is a load-locked, plasma-enabled atomic layer deposition (ALD) system. Fiji2 is currently classified as Flexible and is open to a wide range of metals and dielectrics.	Flexible	SNF Cleanroom Paul G Allen L107
Thermal ALD	Savannah ALD savannah		Flexible	SNF Cleanroom Paul G Allen L107
Deposition	PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Deposition	PDMS Workbench		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Carbon Nanotube CVD Growth	First Nano carbon nanotube CVD furnace cvd-nanotube		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Evaporation	AJA2 Evaporator aja2-evap	This E-beam evaporator can evaporate a variety of semi-clean materials onto your substrates. It is equipped with an ion gun for precleaning samples.	Semiclean	SNF Cleanroom Paul G Allen L107
Evaporation	AJA Evaporator aja-evap		Flexible	SNF Exfab Paul G Allen 155A Venice
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass. The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. (Six inch furnace)	Flexible	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Metal-Organic (MO) CVD	Aixtron MOCVD - III-V system aix200		Flexible	SNF MOCVD Paul G Allen 213XA
Metal-Organic (MO) CVD	Aixtron MOCVD - III-N system aix-ccs	Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN, AlGaN, InGaAlN. Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system.	Clean (MOCVD)	SNF MOCVD Paul G Allen 213XA
Evaporation	Innotec Evaporator Innotec		Flexible	SNF Cleanroom Paul G Allen L107
Sputtering	Lesker2 Sputter lesker2-sputter		Semiclean	SNF Cleanroom Paul G Allen L107

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Detail Tab

Processing Technique	Equipment name & Badger ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
Ink	Optomec Printer optomec-printer	Flexible			Pieces 2" 3" 4" 6"
Plasma Enhanced (PE) ALD	Fiji 1 ALD fiji1	Semiclean	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂
Sputtering	Hummer V Sputter Coater hummer	Flexible
Evaporation	Intlvac Evaporator Intlvac_evap	Clean, Semiclean	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly	0.00 - 0.50 μm	Pieces 2" 3" 4" 6"	12 4 inch wafers, 2 6 inch wafers
Ink	Fujifilm Dimatix Ink Jet Printer nanoinkjet	Flexible	PROM Approval Required for Materials
Graphene CVD Growth	Aixtron Black Magic graphene CVD furnace aixtron-graphene	Flexible	C		Pieces 2" 3" 4"	1x4" wafer or Copper/Nickel foil	800 °C - 1100 °C	78% N₂, 21% O₂, ~1% Ar CH₄ H₂
Patterning, Ink	Voltera voltera	Flexible	Various conductive inks Various custom inks
Plasma Enhanced (PE) ALD	Fiji 2 ALD fiji2	Flexible	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ O₂
Thermal ALD	Savannah ALD savannah	Flexible	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 250 °C	N₂
Deposition	PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Flexible	poly(p-xylylene)		Pieces 2" 3" 4" 6" 8" Cones Disks Other
Deposition	PDMS Workbench	Flexible	dimethylpolysiloxane
Carbon Nanotube CVD Growth	First Nano carbon nanotube CVD furnace cvd-nanotube	Flexible	CNT		Pieces 2" 3" 4"	1x4" wafer or multiple pieces	800 °C - 1100 °C	Ar C₂H₅OH CH₄ H₂ O₂		Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Evaporation	AJA2 Evaporator aja2-evap	Semiclean	Ag Al Co Cr Ge Hf Nb Pd Pt Si Ta Ti V W Zr Moly	0.00 - 300.00 nm	Pieces 2" 3" 4" 6"	4"x3 or 6"x1 wafers or pieces				For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Evaporation	AJA Evaporator aja-evap	Flexible	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania	0.00 - 300.00 nm	Pieces 2" 3" 4" 6"	4"x3 or 6"x1 wafers or pieces				For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Flexible	SiO₂	100.00 Å - 3.00 μm	Pieces 4" 6"	26	300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄		limits on material vapor pressure
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50.00 Å - 3.00 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Metal-Organic (MO) CVD	Aixtron MOCVD - III-V system aix200	Flexible	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN	0.00 - 5.00 μm	Pieces 2" 3" 4"	4"x1 wafer or 2"x1 wafer or 4 pieces	300 °C - 800 °C	H₂ MO sources N₂ SiH₄	Pre-Diffusion Clean	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Metal-Organic (MO) CVD	Aixtron MOCVD - III-N system aix-ccs	Clean (MOCVD)	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN	0.00 - 5.00 μm	Pieces 2" 4"	4"x1, 2"X3, pieces	400 °C - 1300 °C	H₂ MO sources N₂ NH₃ SiH₄		N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Evaporation	Innotec Evaporator Innotec	Flexible	Ag Al Au Co Cr Cu Fe Ge In Ni Pd Si Ta Ti W Moly		Pieces 2" 3" 4" 6"	22 four inch wafers				Precious metals limit is <200nm
Sputtering	Lesker2 Sputter lesker2-sputter	Semiclean	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly	1.00 μm	Pieces 2" 3" 4" 6"	one 4 inch wafer, one 6 inch wafer	°C - 800 °C	Ar N₂ O₂		reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

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Deposition

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