Deposited III-N

A III-N semiconductor is an alloy, containing the N element and elements from groups III in the periodic table. They can be produced using different deposition techniques like MOCVD and MBE.

Equipment name & Badger ID	Location	Image	Overview	Materials Lab Supplied	Link to Training
Aix-ccs aix-ccs	SNF MOCVD Paul G Allen 213XA		Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN,...	AlGaN AlN GaN InAlN InGaAlN InGaN InN	Aixtron MOCVD - III-N system training

Documentation

Community Service Extension Request: P-GaN/AlGAN/GaN E-mode HEMT
Community Service P-GaN/AlGAN/GaN E-mode HEMT Project Proposal
Community Service Project P-GaN/AlGAN/GaN E-mode HEMT- Final Report
MOCVD Growth Calibration for GaN LED on Silicon- Final Presentation
MOCVD Growth Calibration for GaN LED on Silicon- Final Report
MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Presentation
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures- Final Report
MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Report
White Paper: Introduction to the Green Gap Project: InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

This phenomenon is known as ‘green gap’. This document provides a brief background into the technical challenges that inspired the Green Gap E241 project.
White Paper: Introduction to the Green Gap Project: InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

This phenomenon is known as ‘green gap’. This document provides a brief background into the technical challenges that inspired the Green Gap E241 project.

Techniques

Deposited III-N

Documentation

Community Service Extension Request: P-GaN/AlGAN/GaN E-mode HEMT

Community Service P-GaN/AlGAN/GaN E-mode HEMT Project Proposal

Community Service Project P-GaN/AlGAN/GaN E-mode HEMT- Final Report

MOCVD Growth Calibration for GaN LED on Silicon- Final Presentation

MOCVD Growth Calibration for GaN LED on Silicon- Final Report

MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Presentation

MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures- Final Report

MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Report

White Paper: Introduction to the Green Gap Project: InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

White Paper: Introduction to the Green Gap Project: InGaN-GaN Multiple Quantum Wells for Green LEDs on Si

Project

Community Service P-GaN/AlGAN/GaN E-mode HEMT

Improve the performance of MOCVD grown GaN-on-Si HEMT structure

MOCVD Growth Calibration for GaN LED on Silicon

MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMT)

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Deposited III-N

Documentation

Project