Skip to content Skip to navigation

Metal-Organic (MO) CVD

MOCVD is a chemical vapour deposition method using metal organics to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures.

Equipment name & Badger ID	Location	Image	Overview	Materials Lab Supplied	Link to Training
Aix-ccs aix-ccs	SNF MOCVD Paul G Allen 213XA		Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN,...	AlGaN AlN GaN InAlN InGaAlN InGaN InN	Aixtron MOCVD - III-N system training
Aix200 aix200	SNF MOCVD Paul G Allen 213XA		Aixtron MOCVD for III-V and dilute nitride semiconductors: InAs, GaAs,...	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN	Aixtron MOCVD - III-V system training

Project

Documentation

Development of Thin Film Release of GaN using AlN and AlGaN Buffer layers for MEMs Applications- Final Presentation
Development of Thin Film Release of GaN using AlN and AlGaN Buffer Layers for MEMS Applications- Final Report