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Low Pressure (LP) CVD

Low Pressure Chemical Vapor Deoposition, LPCVD, is utilized in the deposition of many silicon based compounds at pressures ranging from about 0.1T to 10T and temperatures ranging from 500-900C.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & Badger ID	Teaser Blurb	Cleanliness	Location
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Teos SiO2 Deposition Furnace teos2	Teos2 furnace allows LPCVD deposition of silicon dioxide, using tetraethyl orthosilicate (TEOS) which can provide a more conformal coating at lower temperature than tylanbpsg films. This is a six inch tube.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass. The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. (Six inch furnace)	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Thermco Nitride Deposition Furnace LPCVD thermconitride1	Silicon nitride (or nitride or Si3N4) is deposited at moderately high temperatures (~800C) and low pressure (~250 mtorr), using dichlorosilane (SiCl2H2) and ammonia (NH3).	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly1 thermcopoly1	Polycrystalline silicon is deposited at a low pressure (~500 mtorr) using silane (SiH4). Deposition temperature is ~620C for polysilicon and ~520C for amorphous silicon.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Same as ThermcoPoly1 but in the "flexible cleanliness" group.	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	TylanBPSG tylanbpsg	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass). The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. The oxide deposition rate is mostly dependent on the temperature and is ~ 175A/min at 400C for 4 inch wafers (~200A/min for 3 inch wafers).	Clean, Semiclean	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass. The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. (Six inch furnace)	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly1 thermcopoly1	Polycrystalline silicon is deposited at a low pressure (~500 mtorr) using silane (SiH4). Deposition temperature is ~620C for polysilicon and ~520C for amorphous silicon.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Same as ThermcoPoly1 but in the "flexible cleanliness" group.	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD, Doping	TylanBPSG tylanbpsg	Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass). The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. The oxide deposition rate is mostly dependent on the temperature and is ~ 175A/min at 400C for 4 inch wafers (~200A/min for 3 inch wafers).	Clean, Semiclean	SNF Cleanroom Paul G Allen L107

Detail Tab

Processing Technique	Equipment name & Badger ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Low Pressure (LP) CVD	Teos SiO2 Deposition Furnace teos2	Clean	SiO₂	50 Å - 5 μm	4" 6"	45	450 °C - 680 °C	N₂ O₂ Si(OC₂H₅)₄	Pre-Diffusion Clean	Very conformal.
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Flexible	SiO₂	100 Å - 3 μm	Pieces 4" 6"	26	300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄		limits on material vapor pressure
Low Pressure (LP) CVD	Thermco Nitride Deposition Furnace LPCVD thermconitride1	Clean	Si3N4	100 Å - 2 μm	Pieces 2" 3" 4" 6"	44	785 °C - 850 °C	N₂ NH₃ DCS	Pre-Diffusion Clean	Stociometric and low stress (~150mPa) programs available
Low Pressure (LP) CVD, Doping	ThermcoPoly1 thermcopoly1	Clean	Ge Si SiGe	100 Å - 3 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Flexible	Ge Si SiGe	100 Å - 3 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ SiGe SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available.
Low Pressure (LP) CVD, Doping	TylanBPSG tylanbpsg	Clean, Semiclean	SiO₂	100 Å - 3 μm	3" 4"	26	300 °C - 450 °C	N₂ O₂ PH₃ SiH₄	Pre-Diffusion Clean, Standard Metal Clean
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50 Å - 3 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Low Pressure (LP) CVD, Doping	Thermco LTO Deposition Furnace thermcoLTO	Flexible	SiO₂	100 Å - 3 μm	Pieces 4" 6"	26	300 °C - 450 °C	B₂H₆ N₂ O₂ PH₃ SiH₄		limits on material vapor pressure
Low Pressure (LP) CVD, Doping	ThermcoPoly1 thermcopoly1	Clean	Ge Si SiGe	100 Å - 3 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available. Amorphous Si programs available.
Low Pressure (LP) CVD, Doping	ThermcoPoly2 thermcopoly2	Flexible	Ge Si SiGe	100 Å - 3 μm	Pieces 2" 3" 4" 6"	44	525 °C - 650 °C	B₂H₆ H₂ N₂ SiGe SiH₄	Pre-Diffusion Clean	Standard polysilicon deposition at 620C. P and N doping available.
Low Pressure (LP) CVD, Doping	TylanBPSG tylanbpsg	Clean, Semiclean	SiO₂	100 Å - 3 μm	3" 4"	26	300 °C - 450 °C	N₂ O₂ PH₃ SiH₄	Pre-Diffusion Clean, Standard Metal Clean