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Deposited Oxide (LPCVD)

Deposited oxide (silicon dioxide) is a high deposition rate, low temperature process (compared to thermally grown oxides).  Either silane or TEOS (Tetra EthOxy Silane or Tetra Ethyl OrthoSilicate) can be used as a precursor for SiO2 depositon by LPCVD.

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Equipment name & Badger ID Location Image Overview Materials Lab Supplied Link to Training
Teos2
teos2
SNF Cleanroom Paul G Allen L107

Teos2 furnace allows LPCVD deposition of silicon dioxide, using tetraethyl...

Teos Deposition Furnace Training
ThermcoLTO
thermcoLTO
SNF Cleanroom Paul G Allen L107

Silicon dioxide (SiO2) is deposited at between 300 and 450C...

Thermco LTO Deposition Furnace Training
TylanBPSG
tylanbpsg
SNF Cleanroom Paul G Allen L107

Silicon dioxide (SiO2) is deposited at between 300 and 450C...

TylanBPSG Deposition Furnace Training