Deposited Oxide (LPCVD)
Deposited oxide (silicon dioxide) is a high deposition rate, low temperature process (compared to thermally grown oxides). Either silane or TEOS (Tetra EthOxy Silane or Tetra Ethyl OrthoSilicate) can be used as a precursor for SiO2 depositon by LPCVD.
| Equipment name & Badger ID | Location | Image | Overview | Materials Lab Supplied | Link to Training |
|---|---|---|---|---|---|
|
Teos2 teos2 |
SNF Cleanroom Paul G Allen L107 |
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Teos2 furnace allows LPCVD deposition of silicon dioxide, using tetraethyl... |
Teos Deposition Furnace Training | |
|
ThermcoLTO thermcoLTO |
SNF Cleanroom Paul G Allen L107 |
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Silicon dioxide (SiO2) is deposited at between 300 and 450C... |
Thermco LTO Deposition Furnace Training | |
|
TylanBPSG tylanbpsg |
SNF Cleanroom Paul G Allen L107 |
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Silicon dioxide (SiO2) is deposited at between 300 and 450C... |
TylanBPSG Deposition Furnace Training |
