Deposited Amorphous Silicon (LPCVD)
Poly crystalline or amorphous silicon is deposited by low pressure chemical vapor deposition at temperatures between 550-800C and silane as the precursor. Other precursors such as disilane or dichorosilane can be used. By adding sopants to the reaction mxture, doped Si can be deposited as well.
| Equipment name & Badger ID | Location | Image | Overview | Materials Lab Supplied | Link to Training |
|---|---|---|---|---|---|
|
ThermcoPoly1 thermcopoly1 |
SNF Cleanroom Paul G Allen L107 |
 |
Polycrystalline silicon (also called "poly-Si" or "poly") is deposited at... |
Thermco Poly Deposition Furnace Training | |
|
ThermcoPoly2 thermcopoly2 |
SNF Cleanroom Paul G Allen L107 |
 |
Same as ThermcoPoly1 but in the "flexible (gold-contaminated)" group. ... |
Thermco Poly Deposition Furnace Training |
