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Deposited Amorphous Silicon (LPCVD)

Poly crystalline or amorphous silicon is deposited by low pressure chemical vapor deposition at temperatures between 550-800C and silane as the precursor.  Other precursors such as disilane or dichorosilane can be used.  By adding sopants to the reaction mxture, doped Si can be deposited as well.

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Equipment name & Badger ID Location Image Overview Materials Lab Supplied Link to Training
ThermcoPoly1
thermcopoly1
SNF Cleanroom Paul G Allen L107

Polycrystalline silicon (also called "poly-Si" or "poly") is deposited at...

Thermco Poly Deposition Furnace Training
ThermcoPoly2
thermcopoly2
SNF Cleanroom Paul G Allen L107

Same as ThermcoPoly1 but in the "flexible (gold-contaminated)" group.  ...

Thermco Poly Deposition Furnace Training